Gas Showers and Deposition Apparatus

Abstract

A gas shower head and a deposition device, the gas shower head includes: a cooling plate with opposite upper and lower surfaces, the cooling plate includes a central area and a peripheral area, and the peripheral area includes a number of cooling pipe areas; each cooling pipe area There is a group of cooling pipes inside, and a group of cooling pipes includes a plurality of arc-shaped pipe sections arranged in parallel from the center to the edge of the cooling plate, and each arc-shaped pipe section is located on a concentric circle with different radii; the multiple arc-shaped pipe sections and There are multiple connecting parts between adjacent arc-shaped pipeline sections, and there are multiple ventilation slots between the connecting sections. The ventilation slots penetrate the cooling plate along the side walls of adjacent arc-shaped pipeline sections, and the ventilation slots are located in concentric circles with different radii. Above; in a cooling pipeline zone, a group of ventilation grooves formed by multiple ventilation grooves on concentric circles with the same radius are connected to the first gas output port and the second gas output port as the radius becomes larger; the central area includes multiple air inlet through the cooling plate. The use of the gas shower head can improve the film forming quality.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a gas shower head and a deposition device. Background technique [0002] Chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is a chemical reaction of reacting substances under gaseous conditions, and the formation of solid substances is deposited on the surface of a heated solid substrate to obtain solid materials. It is realized by chemical vapor deposition equipment. . Specifically, the CVD device feeds the reaction gas into the reaction chamber through the gas inlet device, and controls reaction conditions such as pressure and temperature of the reaction chamber, so that the reaction gas reacts, thereby completing the deposition process steps. [0003] Metal Organic Chemical Vapor Deposition (MOCVD) equipment is mainly used for the preparation of thin-layer single-crystal functional structural materials of III-V compounds, II-VI comp...

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Problems solved by technology

[0004] However, the film quality formed by the existing metal-organic chemical vapor deposition device is not good, so it is necessary to improve the film-forming quality of the device by improving the metal-organic chemical vapor deposition device

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