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A kind of semiconductor laser based on anisotropic substrate

An anisotropic, laser technology, applied in semiconductor lasers, the structural details of semiconductor lasers, lasers, etc., can solve the problems of low heat conduction efficiency and complex packaging process, to simplify manufacturing process steps, improve heat dissipation efficiency, and reduce precision. Effect

Active Publication Date: 2019-02-26
FOCUSLIGHT TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problems of low heat conduction efficiency and complicated packaging process of the existing conduction-cooled semiconductor laser packaging structure, the present invention proposes a new semiconductor laser structure

Method used

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  • A kind of semiconductor laser based on anisotropic substrate
  • A kind of semiconductor laser based on anisotropic substrate
  • A kind of semiconductor laser based on anisotropic substrate

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Embodiment Construction

[0037] like figure 2 As shown, the laser chip 1 is assembled on a substrate 20 with high thermal conductivity and CTE matching, and one or more laser chips and the corresponding substrate are assembled and bonded to the radiator 6 through solder 5 to form a semiconductor laser. The substrate has conductivity in the chip stacking direction (the conductive area covers at least the chip bonding area), and has insulation in the direction perpendicular to the surface of the heat sink.

[0038] like image 3 , the substrate 20 is a composite body composed of insulating materials and conductive materials. The insulating material and the conductive material are closely combined. Such an integrated substrate realizes both conduction and insulation. Compared with the existing conductive substrate plus insulating block bonding The combination of two bonded interfaces and a solder layer (5 to 10 microns thick) are reduced. The layout of the insulating material and the conductive materi...

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Abstract

The invention provides a semiconductor laser based on an anisotropic substrate, which is mainly improved in the substrate of the chip, and solves the problem that the existing conductive semiconductor laser package structure is low in thermal conduction efficiency and complex in package technology. The semiconductor laser based on the anisotropic substrate comprises a laser chip, a substrate and a radiator, wherein the laser chip is bonded on the front or back surface of the substrate, the bottom of the substrate is directly bonded to the radiator via solder, thereby meeting CTE match; the substrate is a complex composed of insulating material and electro-conductive material jointly, and the insulating material and the electro-conductive material are arranged in the complex such that in the complex, corresponding to the bonding area of the laser chip, the front surface of the substrate and the back surface of the substrate are electrically connected; and the bonding area and the bottom of the substrate are in mutual insulation.

Description

technical field [0001] The invention relates to a semiconductor laser, and mainly relates to the improvement of the chip substrate. Background technique [0002] like figure 1 A common semiconductor laser packaging structure is shown, the heat dissipation path of the laser chip is as follows: the heat generated by the semiconductor laser chip 1 is first conducted to the substrate 2, then to the insulating block 4 through the solder layer 3, and then through the solder layer 5 is conducted to the radiator 6. The heat conduction path from the laser chip to the heat sink is long and there are many interfaces, which reduces the heat dissipation capability of the entire laser. [0003] Due to the requirements of structure and process, the thickness of the insulating block 4 generally needs to reach more than 300 microns, which also limits its heat conduction efficiency. At the same time, the solder layer is required for assembly and bonding between the insulating block, the la...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/02H01S5/024
CPCH01S5/0206H01S5/024
Inventor 刘兴胜蔡万绍陶春华邢卓宋涛
Owner FOCUSLIGHT TECH
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