Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for accessing memory, storage class memory and computer system

A computer system, storage-level memory technology, applied in the computer field, which can solve problems such as data errors

Active Publication Date: 2020-04-28
HUAWEI TECH CO LTD +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the DRAM refresh cycle is extended in order to reduce system power consumption, it may cause errors in the data in the memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for accessing memory, storage class memory and computer system
  • Method for accessing memory, storage class memory and computer system
  • Method for accessing memory, storage class memory and computer system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0063] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments.

[0064] The embodiment of the present invention proposes a memory access method based on a hybrid memory system architecture, which can ensure the accuracy of data stored in the memory on the basis of reducing memory refresh power consumption. Figure 1-A , Figure 1-B and Figure 1-C A schematic diagram of a hybrid memory-based computer system architecture provided by an embodiment of the present invention. exist Figure 1-A , Figure 1-B and Figure 1-C In the shown computer system architecture, DRAM and storage-class memory (Storage-Class Mem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments of the present invention provide a method for accessing memory, storage-level memory and a computer system. The computer system includes a memory controller and a mixed memory, and the mixed memory includes a dynamic random access memory DRAM and a storage class memory SCM. The memory controller is configured to send a first access instruction to the DRAM and the SCM. When the SCM determines that the first storage unit set of the DRAM pointed to by the first address in the received first access instruction includes a storage unit whose retention time is shorter than the refresh period of the DRAM, it may obtain the The first address has a mapping relationship with the second address. Further, the SCM converts the first access instruction into a second access instruction for accessing the SCM according to the second address, so as to realize access to the SCM. The computer system provided by the embodiment of the present invention can ensure the correctness of data on the basis of reducing the power consumption of DRAM refreshing.

Description

technical field [0001] The invention relates to the technical field of computers, in particular to a method for accessing memory, storage-level memory and a computer system. Background technique [0002] Traditional system main memory usually consists of dynamic random access memory (Dynamic Random Access Memory, DRAM). The structure of DRAM is simple and the reading speed is fast. The most basic storage unit of a DRAM is a DRAM cell, and each DRAM cell includes a transistor and a capacitor. The DRAM cell uses the amount of electricity stored in the capacitor to represent 0 and 1. According to this method, one DRAM cell can store one bit. Due to the leakage phenomenon of the capacitor, if the charge in the capacitor is insufficient, the stored data will be wrong. Therefore, in practical applications, the capacitor needs to be charged periodically. Through the charging and discharging of the capacitor, the reading, writing and updating of the DRAM cell can be realized, wh...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/10G06F13/16
CPCY02D10/00G06F13/1694G06F13/28G06F11/14G06F12/0246G06F12/0802G06F12/0868G06F12/109G11C11/40615G11C11/40622
Inventor 杨任花赵俊峰杨伟王元钢林殷茵
Owner HUAWEI TECH CO LTD