A high-power and large-bandwidth germanium-silicon photodetector

Abstract

The invention discloses a high-power broadband germanium-silicon photoelectric detector. The detector is used for simulating silicon-based key integrated photoelectric devices of a photon communication system and a microwave photon system, wherein the detector is characterized by comprising multiple shunt-wound germanium-layer structures and inductors. The multiple germanium layers of the shunt-wound germanium-layer structures can be different in sizes to realize regulation and control on parasitic resistance so as to improve the saturation power of the device and ensure that that parasitic parameters are not obviously increased as well; meanwhile, an on-chip inductor and an off-chip inductor are introduced, so that the regulation and control for the parasitic resistance of the device is realized, the high-frequency response of the device is improved, and the operating bandwidth of the device is enhanced; and in addition, the photoelectric detector provided by the invention adopts a lumped electrode structure, so that the germanium-silicon photoelectric detector with high power, broad band, and compact structure is realized.

Description

technical field [0001] The invention relates to a silicon-based integrated optoelectronic device in an analog photonic communication system or a microwave photonic system, and more particularly relates to a silicon-germanium photodetector with high power and wide bandwidth for converting optical signals into electrical signals. Background technique [0002] In the fields of analog photonic communication, microwave photonics, etc., detectors with high saturation power and large bandwidth are required to convert optical signals into electrical signals. The existing detectors based on group III-V materials are technically characterized by high saturation power and wide bandwidth, but there are problems such as high cost and unfavorable large-scale integration. [0003] Xianshu Luo et al. disclose a silicon germanium photodetector using a multi-level cascaded germanium layer structure and a traveling wave electrode structure to increase the saturation power of an output electric...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a high-power and large-bandwidth germanium-silicon photodetector to overcome the problem that the comprehensive performance of the existing germanium-silicon photodetector is difficult to be compatible, such as output power, working bandwidth and device design complexity.

Images