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Bandgap Reference Circuit

A reference source circuit and path technology, applied in circuits, electronic switches, electrical components, etc., can solve problems affecting the accuracy of bandgap reference sources, and achieve the effect of reducing substrate leakage current and improving accuracy

Active Publication Date: 2017-10-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the 5V CMOS process, for the power supply voltage of 6.4V, that is, when the power supply voltage is 6.4V, the device may still work normally, so that the device will have obvious substrate leakage in some states, which seriously affects the bandgap reference. source precision

Method used

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Examples

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Embodiment Construction

[0031] Such as figure 1 As shown, it is a circuit diagram of an existing bandgap reference source; the bandgap reference source circuit includes a main circuit 101 and an operational amplifier 102, and the main circuit 101 includes three mirror current branches, three bandgap paths and an operational amplifier;

[0032] Each mirror current branch is realized by a PMOS transistor respectively, figure 1Among them are PMOS tubes MP0, MP1 and MP2 respectively. The source and substrate electrodes of the PMOS transistors MP0, MP1 and MP2 are all connected to the power supply voltage, the gates of the PMOS transistors MP0, MP1 and MP2 are connected to the output terminal of the operational amplifier 102, and the drains of the PMOS transistors MP0, MP1 and MP2 are respectively used as Corresponding to the output terminal of the mirror current.

[0033] The bandgap path utilizes the superposition of the base-emitter voltage and the base-emitter voltage difference of bipolar transisto...

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PUM

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Abstract

The invention discloses a bandgap reference source circuit, comprising: a mirror current branch, a bandgap path and an operational amplifier; each mirror current branch respectively includes a mirror image and an auxiliary PMOS transistor; the drain of each mirror image PMOS transistor is connected to the corresponding auxiliary PMOS The source of each auxiliary PMOS transistor is connected to the top of the corresponding bandgap path; the grid of each mirror image PMOS transistor is connected to the output terminal of the operational amplifier; the grid of each auxiliary PMOS transistor is connected to the first bias voltage; The substrate electrodes of each mirror image and auxiliary PMOS transistor are connected to the power supply voltage; the output terminal of the operational amplifier outputs a high level lower than the power supply voltage, and the first bias voltage is lower than the output voltage signal of the operational amplifier. When the circuit is working, each auxiliary and The gate-to-drain voltage difference of the mirrored PMOS transistor is smaller than a value that greatly increases the substrate leakage current of the corresponding PMOS transistor at a rate of nanoampere / volt. The invention can reduce the leakage current of the substrate and improve the precision of the reference voltage.

Description

technical field [0001] The invention relates to the manufacture of a semiconductor integrated circuit, in particular to a bandgap reference source circuit. Background technique [0002] Generally, in applications where the power supply voltage domain is 5V, since the working voltage generally has a requirement of plus or minus 10%, that is, normal operation must be guaranteed under a 5.5V power supply, and the minimum deviation of VD due to the high-voltage alarm cannot affect the 5.5V Normal operation, VD is a voltage detector, that is, a voltage detector. The voltage is detected by the voltage detector to determine whether the voltage exceeds the high-voltage alarm value, so the high-voltage alarm voltage may exceed 6V. For example, the typical high-voltage alarm VD is 6V+ / -0.4V , the lowest voltage 5.6V is greater than the normal working voltage of 5.5V, and the highest voltage will reach 6.4V, that is, when the high-voltage alarm VD is 6V+ / -0.4V, it is possible to issue ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
CPCG05F1/461G05F1/625H03K17/60H03K17/687
Inventor 唐成伟
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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