Operation method and cleaning method of ion implantation apparatus

Abstract

The invention relates to the technical field of ion implantation, and particularly to an operating method and a cleaning method for an ion implantation apparatus. The operating method comprises the following steps of an introducing step: introducing a process gas which slowly goes up to a preset flow; an applying step: applying an extraction voltage which slowly goes up to a preset voltage; and a judging step: judging whether the preset flow and the preset voltage achieve target values or not; and if the preset flow and the preset voltage both achieve the target values, stopping the process gas introducing and stopping the extraction voltage applying. By adoption of the operating method and the cleaning method for the ion implantation apparatus, an extraction electrode system of the ion source suffers from relatively low beam current impact, and the output voltage fluctuation is kept at an acceptable range; meanwhile, when the temperatures of the ion source, an electrode plate, a process cavity and the like recover to be close to the injection temperatures, the adsorbed gas is released; the voltage fluctuation is almost avoided after restart; and the extracted ion beams are relatively uniform, so that the ion source can be started and stabilized in a relatively fast manner.

Description

technical field [0001] The invention relates to the technical field of ion implantation, in particular to an operation method and a cleaning method of an ion implantation device. Background technique [0002] In the gaseous ion source ion implantation device, if the operation of extracting the ion beam from the ion source is maintained for a long time, deposits will accumulate inside the ion source and on the ion beam extraction electrodes. An abnormal discharge between electrodes is caused in the electrode system. The abnormal discharge will make the extracted beam current unstable, and too much abnormal discharge will make the injection fail to achieve the intended effect, and even fail to maintain the normal operation of the ion source. [0003] In an ion implantation device, ion implantation is performed on multiple substrates in the manner of multiple implants in slices. Between each piece of ion implantation, in order to exchange processed and untreated substrates, i...

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Problems solved by technology

[0004] The traditional method is to use the method of firstly applying a stable voltage and then supplying an ion source plasma with an appropriate concentration to achieve the purpose of rapid start-up. However, the initial extraction of a large beam is often difficult to stabilize, and it is easy to impact the electrode plate to generate an instantaneous current, resulting in electric field fluctuations in the extraction system. , and cannot be injected normally

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