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Power module for equalizing currents of chips connected in parallel

A power module and chip technology, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve problems such as chip overcurrent burnout, power module reliability impact, serious heat generation, etc., so as to improve reliability and reduce the risk of burnout Effect

Active Publication Date: 2016-08-31
YANGZHOU GUOYANG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the power module is working, different parasitic parameters will cause inconsistencies in the current passing through the parallel devices. The chip with a large current may fail due to over-current burnout. , the reliability of the power module will also be affected in the long run

Method used

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  • Power module for equalizing currents of chips connected in parallel
  • Power module for equalizing currents of chips connected in parallel
  • Power module for equalizing currents of chips connected in parallel

Examples

Experimental program
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Embodiment 1

[0024] A power module with parallel chip current sharing, such as figure 1 As shown, it includes a DC input terminal 1, an output terminal 2, and three parallel half-bridge structures. The three half-bridge structures are arranged sequentially. Each half-bridge structure includes an insulating substrate and a chip assembly on the insulating substrate. In this embodiment, each A block insulating substrate is a half-bridge topology electrical structure, such as figure 2 As shown, each half-bridge structure is connected to an output terminal 2, all half-bridge structures are connected to two DC input terminals 1, and three half-bridge structures form a three-phase bridge electrical topology. Three insulating substrates, a chip assembly, a casing, and a bottom plate form a three-phase bridge power module.

[0025] Insulating substrate structure such as image 3 As shown, it includes a ceramic insulating layer and a metal layer formed on the ceramic insulating layer. The materia...

Embodiment 2

[0036] This embodiment also provides a power module for parallel chip current sharing, its structure is roughly the same as that provided in Embodiment 1, the difference between the two is that the power module in this embodiment adopts the power module shown in Figure 4(c) The length balance groove 9 structure.

Embodiment 3

[0038] This embodiment also provides a power module for parallel chip current sharing, such as Figure 6 As shown, its structure is roughly the same as that provided in Embodiment 1. The difference between the two is that the chip types of the upper bridge arm chip unit 5 and the lower bridge arm chip unit 6 in this embodiment are IGBT and FRD.

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Abstract

The invention discloses a power module for equalizing currents of chips connected in parallel. The power module comprises direct current input terminals, output terminals and a plurality of half-bridge structures connected in parallel. Each half-bridge structure is connected with an output terminal, all the half-bridge structures are jointly connected with two direct current input terminals, and a lower bridge arm metal layer of at least one insulating substrate is provided with an insulating equalizing tank positioned between a wire connection zone and a lower bridge arm chip unit. According to the power module for equalizing currents of chips connected in parallel, the insulating substrate is provided with the equalizing tank, power devices positioned close to the direct current input terminals can be protected, and risks of device burnout caused by overload can be lowered. According to the power module for equalizing currents of chips connected in parallel, parasitic parameters and particularly parasitic inductance and loop circuit resistance of devices connected in parallel are equalized via the power module, current equalizing effects are fulfilled, and reliability of the power module is improved.

Description

technical field [0001] The invention relates to a power semiconductor module, in particular to a power module with parallel chip current sharing. Background technique [0002] The global energy crisis and the threat of climate warming make people pay more and more attention to energy conservation, emission reduction and low-carbon development while pursuing economic development. With the establishment and promotion of green environmental protection in the world, the development and application prospects of power semiconductors are broader. [0003] The power level of the current power module is constantly increasing. Although the current and voltage levels of the power device are constantly increasing, a single power device still cannot meet the needs of high-power converters, so the parallel connection of the internal devices of the power module has become an inevitable choice. The current sharing problem of multiple devices connected in parallel is also highlighted. Due ...

Claims

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Application Information

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IPC IPC(8): H01L23/498H01L23/64H01L25/07H01L25/18
CPCH01L23/49844H01L23/64H01L25/072H01L25/18H01L2224/49111H01L2224/49113H01L2224/49175H01L2924/19107H01L2924/30107
Inventor 徐文辉王玉林方赏华刘凯
Owner YANGZHOU GUOYANG ELECTRONICS CO LTD
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