Etching solution composition for silver-containing film and manufacturing method of an array substrate for display device using the same
A composition and etching solution technology, applied in the direction of surface etching compositions, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of prolonged process time, wiring floating or peeling, poor etching, etc. Excellent limit dimensional variation, uniform etching characteristics, and easy control of etching rate
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experiment example 1
[0104] Experimental example 1. Determination of limit size deviation (CD bias)
[0105] The silver etchant compositions of Examples 1 to 14 and Comparative Examples 1 to 12 were respectively loaded into the experimental equipment (model name: ETCHER, K.C.Tech Corporation) of the jet etching method, and the temperature was set to 40° C. After heating, when the temperature reached 40±0.1° C., the etching process of the test piece was performed. The total etching time was set to 100 seconds and implemented.
[0106] Load the substrate, start spraying, and take it out after 100 seconds of etching time, wash it with deionized water, and dry it with a hot air drying device. After washing and drying, the substrate was cut, and the cross-section was measured using a scanning electron microscope (SEM; model name: SU-8010, manufactured by HITACHI Corporation). As a standard for measuring the limit size deviation, the difference in the width of the wiring is measured from the width o...
experiment example 2
[0111] Experimental example 2. Determination of residue
[0112] The silver etchant compositions of Examples 1 to 14 and Comparative Examples 1 to 12 were respectively loaded into the experimental equipment (model name: ETCHER, K.C.Tech Corporation) of the jet etching method, and the temperature was set to 40° C. After heating, when the temperature reached 40±0.1° C., the etching process of the test piece was performed. The total etching time was set to 100 seconds and implemented.
[0113] Load the substrate, start spraying, take out after 100 seconds of etching time, rinse with deionized water, dry using a hot air drying device, and remove the photoresist using a photoresist stripper (PR stripper). After washing and drying, use a scanning electron microscope (SEM; model name: SU-8010, manufactured by HITACHI Corporation) to measure the phenomenon that silver (Ag) is not etched and remains in the part not covered by the photoresist, that is, residue. The following standar...
experiment example 3
[0117] Experimental Example 3. Determination of Silver Resorption
[0118] The silver etchant compositions of Examples 1 to 14 and Comparative Examples 1 to 12 were respectively loaded into the experimental equipment (model name: ETCHER, K.C.Tech Corporation) of the jet etching method, and the temperature was set to 40° C. After heating, when the temperature reached 40±0.1° C., the etching process of the test piece was performed. The total etching time was set to 100 seconds and implemented.
[0119] Load the substrate, start spraying, take out after 100 seconds of etching time, rinse with deionized water, dry using a hot air drying device, and remove the photoresist using a photoresist stripper (PR stripper). After cleaning and drying, use a scanning electron microscope (SEM; model name: SU-8010, manufactured by HITACHI Corporation) to examine the parts where dissimilar metals such as data wiring etc. are exposed after etching, and where friction may occur due to bending p...
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