Treatment apparatus

A technology for processing devices and processing chambers, which is applied in the manufacture of discharge tubes, electrical components, semiconductors/solid-state devices, etc., can solve the problem that heat dissipation measures cannot be applied to large processing containers, achieve good temperature control efficiency, and improve temperature regulation efficiency , The effect of easy disassembly
CN105957791AActive Publication Date: 2016-09-21TOKYO ELECTRON LTD

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
TOKYO ELECTRON LTD
Publication Date
2016-09-21

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Abstract

To provide a treatment apparatus having a heat radiation preventing structure applicable also to a large-sized treatment container, and being easy to handle without causing particles. A heat radiation suppressing unit 105 is arranged along a sidewall 101b to cover a part or substantially the whole surface of an external wall surface of each sidewall 101b of the treatment container 101. The heat radiation suppressing unit 105 is constituted of a plurality of plate members 106, and each plate member 106 is mounted to a spacer 107, disposed on the external wall surface of the sidewall 101b of the treatment container 101. Each plate member 106 is mounted spaced apart from the treatment vessel 101 by interposing the spacer 107, and an air heat insulating part 180 is formed in between.
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Description

[0001] This application is a divisional application of an application whose filing date is February 18, 2011, application number is 201110042001.9, and the title of the invention is "processing device". technical field

[0002] The present invention relates to a processing device, and more specifically, to a structure for suppressing heat dissipation of a processing container used in a processing device that performs plasma processing or the like. Background technique

[0003] In a manufacturing process of an FPD (Flat Panel Display), various plasma treatments such as plasma etching, plasma ashing, and plasma film formation are performed on a glass substrate for an FPD. As an apparatus for performing such plasma processing, a parallel plate type plasma processing apparatus, an inductively coupled plasma (ICP: Inductively Coupled Plasma) processing apparatus, and the like are known.

[0004] Here, in various plasma processing apparatuses, the temperature in the processing cha...

Claims

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