A kind of perpendicular anisotropic magnetic element, preparation method and magnetic memory

A vertically anisotropic, magnetic element technology, applied in the field of magnetic storage, can solve the problems of exponential increase in write current, unsustainable, and difficult expansion of MRAM memory.

Active Publication Date: 2019-11-19
HUBEI ZHONGBU HUIYI DATA TECH
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Problems solved by technology

[0003] The technical problem in the prior art is that the write current required by traditional magnetic random access memory (MRAM) increases exponentially with the increase in recording density.
Therefore, MRAM memory based on traditional magnetic field switch technology has difficult to expand and unsustainable problems

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  • A kind of perpendicular anisotropic magnetic element, preparation method and magnetic memory
  • A kind of perpendicular anisotropic magnetic element, preparation method and magnetic memory
  • A kind of perpendicular anisotropic magnetic element, preparation method and magnetic memory

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Embodiment Construction

[0105] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0106] According to the magnetic mechanism, spin torque transfer magnetic random access memory (STT-MRAM) can use in-plane or perpendicular magnetic anisotropy (perpendicular anisotropy) and the corresponding magnetization distribution to realize magnetic recording and storage of information.

[0107] The invention aims to realize a magnetic multilayer film spin valve device with perpendicular magnetic anisotropy characteristics and a spin torque transmission magnetic random access memory. In such a magnetic spin valve structure, the magnetic pinned layer and the free layer have demagnetization ene...

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Abstract

The invention provides a vertical anisotropic magnetic element, a preparation method and a magnetic memory; the magnetic element used in the magnetic device will be connected with a semiconductor integrated circuit to form a memory bit unit. The magnetic element has a structure of a vertical anisotropic magnetic fixed layer, a non-magnetic spacer layer and a vertical anisotropic magnetic free layer. Wherein the nonmagnetic spacer layer is located between the perpendicular anisotropic magnetic pinned layer and the free layer. The perpendicular anisotropic magnetic free layer has demagnetization energy perpendicular to the film plane direction and anisotropy energy corresponding to perpendicular anisotropy. Its perpendicular anisotropy energy is greater than the demagnetization energy perpendicular to the film plane. When the write current passes through the magnetic element, through the spin torque transfer effect, the perpendicular anisotropic magnetic free layer can switch between parallel and antiparallel magnetic states perpendicular to the plane direction to achieve the purpose of magnetic storage.

Description

technical field [0001] The invention belongs to the technical field of magnetic storage, and more specifically relates to a perpendicular anisotropic magnetic element, a preparation method and a magnetic storage. Background technique [0002] The magnetic random access memory based on the spin torque transfer mechanism, that is, the spin torque transfer magnetic random access memory (STT-MRAM), can replace the traditional magnetic random access memory based on the traditional magnetic field switch technology in terms of magnetic recording characteristics. Memory access memory (MRAM) technology is thus revolutionary. And promote the high density of magnetic recording, the scalability and sustainability of magnetic memory technology. Under the background of the continuous reduction of semiconductor technology nodes and the rapid increase of data recording density, the new spin torque transfer magnetic random access memory (STT-MRAM) scheme has broad application prospects in t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/12G11C11/16
CPCG11C11/16H10N50/01H10N50/10G11C11/1659G11C11/161
Inventor 刁治涛李占杰罗逍
Owner HUBEI ZHONGBU HUIYI DATA TECH
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