Photosensitive device, display panel and display device

Abstract

The invention relates to the technical field of semiconductors, and particularly relates to a photosensitive device and a photosensitive apparatus, aiming to realize the light intensity identification in a low-temperature polysilicon thin film transistor. The photosensitive device includes a top-gate type first thin film transistor used as a control switch and a top-gate type second thin film transistor connected with the first thin film transistor and used as a photosensitive unit, the grid of the second thin film transistor is at least partially transparent and is corresponding to part of the active layer in the second thin film transistor, so that the light intensity identification of the second thin film transistor can be realized when the two thin film transistors are conducted at the same time. In addition, the second thin film transistor can effectively distinguish the reading condition of the current signal at the output signal end under the different light irradiation, so that the sensitivity of the photosensitive device is improved. The photosensitive device realizes the light intensity induction in the top-gate type thin film transistors, the application of photosensitive devices is widen, and the identification efficiency and speed are relatively high.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a photosensitive device, a display panel, and a display device. Background technique [0002] Existing photosensitive devices are generally made of diodes, and their photosensitive effects are not ideal. Moreover, the sensitivity of photosensitive devices made of amorphous silicon thin film transistors that appear at present is not high. Therefore, it is urgent to find a photosensitive device used in the field of low temperature polycrystalline silicon thin film transistors. Contents of the invention [0003] Embodiments of the present invention provide a photosensitive device and a photosensitive device, which are used to realize the purpose of identifying light intensity in a low-temperature polysilicon thin film transistor. [0004] Embodiments of the present invention adopt the following technical solutions: [0005] A photosensitive device, comprising: a first thi...

AI Technical Summary

Problems solved by technology

[0002] Existing photosensitive devices are generally made of diodes, and their photosensitive effects are not ideal

Moreover, the sensitivity of the photosensitive device made of the currently occurring amorphous silicon thin film transistor is not high. Therefore, it is urgent to find a photosensitive device used in the field of low temperature polysilicon thin film transistor.

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