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an ultraviolet light emitting diode

A technology of light-emitting diodes and light-emitting areas, which is applied in semiconductor devices, electrical components, circuits, etc., to achieve the effect of improving light-extraction efficiency and improving external quantum efficiency.

Active Publication Date: 2018-11-09
QINGDAO JASON ELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For chips with a wavelength lower than 365nm, the output power of the UV LED is only 5%-8% of the input power; when the wavelength is above 385nm, the efficiency of the UV LED is improved, but only 15% of the input power

Method used

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Examples

Experimental program
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Embodiment 1

[0031] Such as Figure 1-Figure 2 As shown, the ultraviolet light emitting diode of this embodiment includes a substrate 100 , a buffer layer 200 , an N-type semiconductor layer 300 , a light-emitting region 400 , a P-type semiconductor layer 500 and a contact layer 600 which are sequentially formed. The ultraviolet light emitting diode further includes a P-type electrode 900 and an N-type electrode 700 , the P-type electrode 900 is distributed on the contact layer 600 , and the N-type electrode 700 is in contact with the N-type semiconductor layer 300 . A first light reflector 800 for guiding the light emitted from the side of the light emitting region 400 to the light emitted from the front is arranged on the side of the light emitting region 400 . The first light reflector 800 can guide the light emitted from the light-emitting area 400 to the side to the forward light-emitting surface of the ultraviolet light-emitting diode, and the light is emitted from the forward light-...

Embodiment 2

[0040] Such as Figure 3-5 As shown, based on the first embodiment above, this embodiment further improves the arrangement of the P-type electrode 500 and the N-type electrode 300 of the ultraviolet light-emitting diode. The N-type electrode 300 is no longer located at a corner of the ultraviolet light-emitting diode, but the P The type electrode 500 is disposed on the periphery of the N-type electrode 300 to improve the uniformity of the current between the P-type electrode 500 and the N-type electrode 300 and improve the luminous efficiency.

[0041] Specifically, such as Figure 4 As shown, in this embodiment, the N-type semiconductor layer 300 is provided with a groove 310 , and the light-emitting region 400 , the P-type semiconductor layer 500 and the contact layer 600 are all provided with through holes 410 , 510 , 610 connected in sequence. The through hole 410 of the light emitting region 400 communicates with the groove 310 , the groove 310 and the through holes 410 ...

Embodiment 3

[0048] Such as Figure 6 As shown, this embodiment is further improved on the basis of the second embodiment, and there is an insulating layer 710 isolating the N-type electrode 700 from the light emitting region 400 , the P-type semiconductor layer 500 and the contact layer 600 in the through holes 410 , 510 , 610 .

[0049] Among them, the insulating layer is Al 2 o 3 or SiO 2 The material can effectively prevent the contact between the N-type electrode 700 and the light emitting region 400 , the P-type semiconductor layer 500 and the contact layer 600 , and avoid short circuit.

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Abstract

The invention discloses a UV LED. The UV LED comprises P type electrodes, N type electrodes, an N type semiconductor layer, a light emitting area, a P type semiconductor layer and a contact layer, wherein the N type semiconductor layer, the light emitting area, the P type semiconductor layer and the contact layer are formed successively, and the side surface of the light emitting area is provided with a first reflection body which is used to guide lateral light extraction of the light emitting area into front-side light extraction. Thus, the first reflection body can increase extraction light in the front side of the LED, and the light guiding efficiency of the UV LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to an ultraviolet light emitting diode. Background technique [0002] With the development of LED applications, UV LEDs are widely used because of their wider spectral range (luminous wavelength can cover the 210-400nm band), more energy-saving, and no toxic substance mercury. They have advantages that other traditional UV light sources cannot match. In many aspects of life, such as UV disinfection, UV hardening, optical sensors, UV authentication, body fluid detection and analysis and other fields. At present, the technical bottleneck of ultraviolet LED is mainly low luminous efficiency. For chips with a wavelength lower than 365nm, the output power of the UV LED is only 5%-8% of the input power; when the wavelength is above 385nm, the efficiency of the UV LED is improved, but only 15% of the input power. [0003] How to design an LED light source wit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/10
CPCH01L33/10
Inventor 武帅潘兆花万永泉
Owner QINGDAO JASON ELECTRIC
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