GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

A light-emitting diode, gallium nitride-based technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of low light output efficiency of LED chips, and achieve the effect of increasing front light output

Active Publication Date: 2019-11-12
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem of low light extraction efficiency of LED chips in the prior art, an embodiment of the present invention provides a GaN-based light-emitting diode epitaxial wafer and a manufacturing method thereof

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  • GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof
  • GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0027] An embodiment of the present invention provides a GaN-based light-emitting diode epitaxial wafer, figure 1 It is a schematic structural diagram of a gallium nitride-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention, as shown in figure 1 As shown, the gallium nitride-based light-emitting diode includes a substrate 1, and a low-temperature buffer layer 2, a reflective layer 3, a high-temperature buffer layer 4, an N-type layer 5, a shallow well layer 6, and a multi-quantum layer stacked on the substrate 1 in sequence. Well active layer 7 , low-temperature P-type layer 8 , P-type electron blocking layer 9 , high-temperature P-type layer 10 , and P-type contact layer 11 .

[0028] Wherein, reflective layer 3 is Si x In the N layer, 0

[002...

Embodiment 2

[0037] An embodiment of the present invention provides a method for manufacturing a gallium nitride-based light-emitting diode epitaxial wafer, which is suitable for the gallium nitride-based light-emitting diode epitaxial wafer provided in Embodiment 1. figure 2 It is a flow chart of a method for preparing a gallium nitride-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention, as shown in figure 2 As shown, the manufacturing method includes:

[0038] Step 201, performing pretreatment on the substrate.

[0039] Optionally, the substrate is sapphire with a thickness of 630-650um.

[0040]In this embodiment, Veeco K465i or C4MOCVD (Metal Organic Chemical VaporDeposition, metal organic compound chemical vapor deposition) equipment is used to realize the LED growth method. Using high-purity H 2 (hydrogen) or high-purity N 2 (nitrogen) or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N...

Embodiment 3

[0068] An embodiment of the present invention provides a method for manufacturing a gallium nitride-based light-emitting diode epitaxial wafer. In this embodiment, the reflective layer is Si x The N layer, 0.3≤x≤0.5, has a thickness of 20-40nm, and the concentration of Si in the reflective layer gradually decreases from the side close to the low-temperature buffer layer to the side away from the low-temperature buffer layer. When growing the reflective layer, the pressure in the reaction chamber is controlled at 100-500 torr, and the growth speed is 50-300 r / min during the growth process.

[0069] After finishing the growth of GaN-based light-emitting diode epitaxial wafers, lower the temperature of the reaction chamber to 600-900°C, in PN 2 The atmosphere is annealed for 10-30min, and then gradually lowered to room temperature, and then, a single 9*27mil chip is manufactured through cleaning, deposition, photolithography and etching follow-up processes.

[0070] After testin...

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Abstract

The invention discloses a gallium nitride based LED epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The gallium nitride based LED epitaxial wafer comprises a substrate, and a low-temperature buffer layer, a reflection layer, a high-temperature buffer layer, an N type layer, a shallow well layer, a multi-quantum well active layer, a low-temperature P type layer, a P type electron barrier layer, a high-temperature P type layer and a P type contact layer laminated on the substrate successively. The reflection layer is a SixN layer, x is greater than 0 and lower than 1, and the concentration of Si in the reflection layer is reduced gradually from the side close to the low-temperature buffer layer to the side far from the low-temperaturebuffer layer. The refractive index of the SixN reflection layer is reduced gradually with gradual reduce of the concentration of Si, both the refractive index and the reflectivity are increased gradually from the light incident direction, and thus, part of downwardly moving photons generated by the multi-quantum well active layer is reflected back; and when light reflected from the substrate enters the SixN reflection layer, the transmittance of the reflection layer is increased gradually, and light emission in the front side of an LED is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. Its core part is a wafer composed of P-type semiconductor and N-type semiconductor, and there is a transition layer between P-type semiconductor and N-type semiconductor, which is called PN junction. In the PN junction of some semiconductor materials, when the injected minority carriers recombine with the majority carriers, the excess energy will be released in the form of light, thereby directly converting electrical energy into light energy. [0003] Existing LEDs include a substrate and an epitaxial layer disposed on the substrate. The epitaxial layer includes a low-temperature buffer layer, a high-temperature buffer layer, an N-type la...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/10H01L33/06H01L33/32H01L33/00
CPCH01L33/0075H01L33/06H01L33/10H01L33/32
Inventor 肖云飞刘春杨胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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