Semiconductor light emitting device and manufacturing method thereof

Abstract

The invention discloses a semiconductor light emitting device and a manufacturing method thereof. The semiconductor light emitting device comprises a substrate, at least one positive pad and at leastone negative pad arranged on the substrate, at least one semiconductor light emitting chip arranged on the substrate, a phosphor layer arranged on the substrate and coating the semiconductor light emitting chip and an insulation layer arranged at the inner side of the phosphor layer, wherein the positive electrode and the negative electrode of the semiconductor light emitting chip are electricallyconnected with the positive pad and the negative pad respectively; the insulation layer is located between part or all of the inner surface of the phosphor layer and part or all of the surface of thesubstrate, or, between part or all of the inner surface of the phosphor layer and part or all of the side surface of the semiconductor light emitting chip. According to the semiconductor light emitting device, through arranging the structure layer to block the side surface of the semiconductor light emitting chip, side light emitting of the semiconductor light emitting chip is prevented, front light emitting of the semiconductor light emitting chip is enhanced, and the method is suitable for manufacturing a lighting lamp with high central light intensity requirements and little light emittingangle requirements.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting devices, in particular to a semiconductor light emitting device and a manufacturing method thereof. Background technique [0002] With the improvement of luminous efficiency and the reduction of manufacturing cost, semiconductor light sources have been widely used in the fields of backlight, display and lighting. Semiconductor light sources include LEDs, COBs, modules, light panels, light strips and many other types. In the near future, semiconductor light sources may replace traditional light sources as the main light source for general lighting. [0003] Common semiconductor light source (semiconductor light emitting device) structure such as figure 1 As shown, it includes a substrate 1, a phosphor layer 2 disposed on the substrate, a semiconductor light-emitting chip 3, a chip positive electrode 4a and a chip negative electrode 4b, a positive electrode pad 5a and a negati...

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Problems solved by technology

Because silica gel has a certain degree of air permeability, moisture, sulfides, halides, etc. in the environment will enter the surface of the semiconductor light-emitting chip, the surface of the substrate, and the welding of the semiconductor light-emitting chip and the substrate through the silica gel-based phosphor layer, which will lead to surface vulcanization. With halogenation, serious light decay, or even failure

[0006] Therefore, due to the essential defects and deficiencies in the structure of the above-mentioned semiconductor light-emitting light source, it is impossible to solve the problems of front light intensity and small light-emitting angle of the semiconductor light-emitting device. Fast, poor reliability and other issues

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