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Formation method of metal pad

A metal pad and top-layer metal technology, which is applied in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve problems such as metal pad pollution

Active Publication Date: 2016-10-05
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] This application aims to provide a method for forming metal pads to solve the problem of metal pad contamination caused by silicon debris in the prior art

Method used

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  • Formation method of metal pad

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Embodiment Construction

[0033] It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0034] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and / or combinations thereof.

[0035] For the convenience of description, spatially relative terms may be used here, such as "on ...", "over .....

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Abstract

The application provides a formation method of a metal pad. The formation method comprises the steps of providing a semiconductor substrate possessing a semiconductor previous technology structure; forming a metal interconnection layer on the semiconductor substrate, wherein the metal interconnection layer possesses a top-layer metal wiring layer; arranging the metal pad and a passivation layer on the top-layer metal wiring layer; and carrying out the alloying processing on the metal interconnection layer, wherein the oxygen is introduced during the process of the alloying step to form an oxidation layer on the surface of the metal pad. By introducing the oxygen during the alloying process, the oxidation layer is formed on the surface of the metal pad during the alloying process of the metal interconnection layer, and the formed oxidation layer can protect the metals under the oxidation layer, thereby avoiding that the metals in the metal pad are damaged by the silicon fragments. Moreover, the introduced oxygen does not influence the alloying process, thereby keeping an alloying processing effect of forming good contact surfaces between the layers and reducing the contact resistance between the layers by reducing the stresses of the layers in the metal interconnection layer.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a method for forming a metal pad. Background technique [0002] In the semiconductor manufacturing process, after the top metal wiring layer is made, it is necessary to make a metal pad on the top metal wiring layer. The metal pad is usually an aluminum pad (Al PAD), and the metal pad becomes the connection of the subsequent packaging interconnection. point. [0003] There are many methods for making metal pads in the prior art, including the making of metal pads and the passivation layer. A method for making metal pads is given below: [0004] Firstly, a semiconductor substrate 100 having a semiconductor front-end process structure is provided, and a semiconductor substrate 100 is formed on the semiconductor substrate 100 figure 1 The metal interconnect layer 200 shown; figure 1 Metal interconnect layer 200 is shown formed on the top metal w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60H01L21/768
CPCH01L2224/05
Inventor 张飞赵娅俊
Owner SEMICON MFG INT (SHANGHAI) CORP
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