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Array substrate and manufacturing method thereof, and display apparatus

A technology for array substrates and display devices, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problem that the small size of thin-film transistors cannot be satisfied at the same time, meet the requirements of narrow frame design, ensure stability, reduce small size effect

Inactive Publication Date: 2016-10-26
BOE TECH GRP CO LTD
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Problems solved by technology

[0004] In the prior art, since the thin film transistor in the pixel unit and the thin film transistor in the gate drive circuit are generally made of the same material, the thin film transistor in the pixel unit has good stability and the thin film transistor in the gate drive circuit has good stability. Transistors with small dimensions cannot simultaneously satisfy the

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  • Array substrate and manufacturing method thereof, and display apparatus
  • Array substrate and manufacturing method thereof, and display apparatus
  • Array substrate and manufacturing method thereof, and display apparatus

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Embodiment Construction

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] None of the metal oxide semiconductors in the prior art can satisfy both good optical stability and high carrier mobility. Based on this, an embodiment of the present invention provides an array substrate, such as figure 1 As shown in FIG. 2 , it includes a pixel unit 03 and a gate drive circuit 04; the pixel unit 03 includes a first thin film transistor 10, the gate drive circuit 04 includes a second thin film transistor 20, and the active layer 101 of...

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Abstract

An embodiment of the invention provides an array substrate and a manufacturing method thereof, and a display apparatus and relates to the display technology field. Stability of a thin film transistor in a pixel unit can be guaranteed and the size of the thin film transistor in a grid driving circuit can be reduced so as to realize a narrow frame design. The array substrate comprises the pixel unit and the grid driving circuit. The pixel unit comprises a first film transistor. The grid driving circuit comprises a second film transistor. An active layer of the first film transistor comprises a first metal oxide pattern and a second metal oxide pattern which are stacked. An active layer of the second film transistor is a third metal oxide pattern. Optical stability of the second metal oxide pattern is greater than optical stability of the first metal oxide pattern. Carrier mobilities of the first metal oxide pattern and the third metal oxide pattern are greater than a carrier mobility of the second metal oxide pattern. The display apparatus is used for the array substrate comprising the grid driving circuit and the pixel unit.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a preparation method thereof, and a display device. Background technique [0002] With the continuous development of display technology, people have higher and higher requirements for narrow borders of displays. In order to further reduce the width of the display frame, the current technology is to manufacture the gate drive circuit (Gate On Array, GOA for short) on the TFT (Thin Film Transistor, thin film transistor) array substrate, which can not only reduce the production process, but also reduce the cost. , and since a gate driver chip (Integrate Circuit, IC for short) is not required, the border can be made very narrow, and the integration degree of the TFT array substrate can be improved. [0003] Oxide Thin Film Transistor (OTFT for short) among thin film transistors has become a hotspot in the development of thin film transistors due to its a...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1225H01L27/1233H01L27/1259H01L27/127
Inventor 杨维王珂
Owner BOE TECH GRP CO LTD
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