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Silicon carbide junction barrier Schottky rectifier

A silicon carbide and rectifier technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as large leakage currents

Active Publication Date: 2016-11-23
SHANGHAI HESTIA POWER INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The main purpose of the present invention is to provide a silicon carbide junction energy barrier Schottky rectifier, which solves the problem that the existing Schottky barrier diode has a large leakage current when operating in reverse bias

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  • Silicon carbide junction barrier Schottky rectifier
  • Silicon carbide junction barrier Schottky rectifier
  • Silicon carbide junction barrier Schottky rectifier

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Embodiment Construction

[0050] Relating to the detailed description and technical contents of the present invention, it is now described as follows with regard to the accompanying drawings:

[0051] Please refer to Figure 1A , Figure 1B and figure 2 as shown, Figure 1A It is a three-dimensional exploded schematic diagram of the appearance of the first embodiment of the present invention, Figure 1B for Figure 1A The partial cross-sectional schematic diagram of figure 2 It is a schematic top view of the drift layer of the first embodiment of the present invention, as shown in the figure: the present invention is a silicon carbide junction barrier Schottky rectifier, which includes a silicon carbide substrate 10, a drift layer 20, a p-type doped The impurity region 40 , a plurality of junction field effect regions 50 , a first metal layer 30 and a second metal layer 60 .

[0052] The silicon carbide substrate 10 can be obtained by cutting silicon carbide crystals to a specific thickness, or a ...

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Abstract

The invention discloses a silicon carbide junction barrier Schottky rectifier, which comprises a silicon carbide substrate, a drift layer, a p-type doped region, a plurality of junction field effect regions, a first metal layer and a second metal layer. The drift layer is arranged on the silicon carbide substrate; the junction field effect regions are arranged in the drift layer and are encircled by the p-type doped region; the first metal layer is arranged on the drift layer; and the second metal layer is arranged at the side, away from the drift layer, of the silicon carbide substrate. Through N circle regions and (N-1) connection regions connected between the corresponding two circle regions of the junction field effect regions, and through geometrical features of the circle regions and the connection regions, element leakage current is reduced effectively and withstand voltage is improved, and the problem that an existing Schottky barrier rectifier has larger leakage current is improved.

Description

technical field [0001] The invention relates to a semiconductor element, especially a silicon carbide Schottky rectifier. Background technique [0002] Silicon carbide has a wide energy gap, excellent chemical stability, electrical conductivity, and thermal conductivity. Power components are widely used in AC-DC conversion of various electric power, requiring characteristics such as low on-resistance, low leakage current, high breakdown voltage and fast switching to reduce conduction loss and switching loss during operation. The high critical breakdown electric field of silicon carbide due to its wide energy gap, and the intrinsic carrier concentration far lower than the component doping concentration make silicon carbide a very high-temperature, high-frequency, and high-power power component material. [0003] For example, in U.S. Patent Publication No. US2006 / 0022292, a structure of a silicon carbide Schottky Barrier Diode (SBD for short) is disclosed, by means of a subst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06
Inventor 颜诚廷洪建中李傳英李隆盛
Owner SHANGHAI HESTIA POWER INC