Unlock instant, AI-driven research and patent intelligence for your innovation.

A preparation method of large-grain organic-inorganic hybrid perovskite film

A perovskite, large-grain technology, used in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve the problems of high energy consumption, restrict development, and high cost, and achieve improved device performance, low equipment requirements, The effect of reducing internal defects

Active Publication Date: 2018-08-10
NANJING TECH UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional silicon-based solar cells face high cost and high energy consumption, which seriously restricts their further development

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A preparation method of large-grain organic-inorganic hybrid perovskite film
  • A preparation method of large-grain organic-inorganic hybrid perovskite film
  • A preparation method of large-grain organic-inorganic hybrid perovskite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A method for preparing a large-grain organic-inorganic hybrid perovskite film, the preparation method comprising the following steps:

[0040] (1) Solvent DMSO with a certain mass fraction is configured as the perovskite precursor liquid for standby;

[0041] (2) The precursor material CH 3 NH 3 I·PbI 2 Dissolved in the perovskite precursor solution in the step (1), forming a yellow solution for subsequent use;

[0042] (3) Configure the perovskite precursor solution in the step (2) into a chemical formula of CH 3 NH 3 PB 3-x Br x Organic-inorganic hybrid perovskites, where 0≤x≤3.

[0043] (4) heating the organic-inorganic hybrid perovskite obtained in the step (3) to above 130° C. under magnetic stirring conditions, and keeping it for 1 to 3 minutes;

[0044] (5) drop the solution obtained in the step (4) onto the prepared substrate, and spin-coat at a speed of 2500rpm for 25s to obtain a perovskite film;

[0045] (6) The perovskite film was annealed at 150°C ...

Embodiment 2

[0056] A method for preparing a large-grain organic-inorganic hybrid perovskite film, the preparation method comprising the following steps:

[0057] (1) configure the mixed solution of DMSO and DMF of a certain mass fraction as a solvent, and use the solvent as a perovskite precursor solution for subsequent use;

[0058] (2) The precursor material CH 3 NH 3 I, PbI 2 Dissolved in the perovskite precursor solution in the step (1), forming a yellow solution for subsequent use;

[0059] (3) Configure the perovskite precursor solution in the step (2) into a chemical formula of CH 3 NH 3 PB 3-x Br x The organic-inorganic hybrid perovskite, where 0≤x≤3.

[0060] (4) heating the organic-inorganic hybrid perovskite obtained in the step (3) to above 130° C. under magnetic stirring conditions, and keeping it for 1 to 3 minutes until the spin coating is completed;

[0061] (5) drop the solution obtained in the step (4) onto the prepared substrate, and spin-coat for 30s at a rotat...

Embodiment 3

[0067] A method for preparing a large-grain organic-inorganic hybrid perovskite film, the preparation method comprising the following steps:

[0068] (1) Configure a mixed solution of DMSO and GBL with a certain mass fraction as a solvent, and use the solvent as a perovskite precursor solution for subsequent use;

[0069] (2) The precursor material CH 3 NH 3 I·PbI 2 Dissolved in the perovskite precursor solution in the step (1), forming a yellow solution for subsequent use;

[0070] (3) Configure the perovskite precursor solution in the step (2) into a chemical formula of CH 3 NH 3 PB 3-x Cl x The organic-inorganic hybrid perovskite, where 0≤x≤3.

[0071] (4) heating the organic-inorganic hybrid perovskite obtained in the step (3) to above 130° C. under magnetic stirring conditions, and keeping it for 1 to 3 minutes until the spin coating is completed;

[0072] (5) drop the solution obtained in the step (4) onto the prepared substrate, and spin coat at a speed of 4000r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a large-grain organic-inorganic hybrid perovskite film, which belongs to the field of perovskite solar cells and related optoelectronic semiconductor materials. It includes the steps of configuring organic-inorganic hybrid perovskite precursor liquid, stirring and heating, spin-coating, and annealing to prepare a uniform and dense large-grain film. The cooling rate has strict requirements, and the film is formed efficiently and quickly. By adjusting the grain size of the perovskite light-absorbing layer, the virtual crystal film growth is realized, which not only reduces the internal defects of the crystal, improves the carrier transport efficiency, but also regulates the grain boundary defects, greatly improving the environmental stability of the perovskite crystal film. Enhancing the performance of perovskite thin film devices. The perovskite-type virtual single-crystal thin film prepared by this low-temperature solution method can be applied to assemble hysteresis-free, high-efficiency, stable perovskite-type solar cells and related thin-film transistors, electroluminescence, laser emission and other optoelectronic semiconductor devices .

Description

technical field [0001] The invention belongs to the field of perovskite solar cells and related optoelectronic semiconductor materials, more specifically, relates to a method for preparing a large-grain organic-inorganic hybrid perovskite film, which realizes the growth of a virtual crystal film and prepares a high-performance film by a low-temperature solution method. Stable perovskite optoelectronic semiconductor thin films. Background technique [0002] Today, with the depletion of fossil energy and the increasingly serious environmental problems, the development and utilization of solar energy and other renewable energy have always been paid attention to. With technological advancements in the field of solar photovoltaics, solar energy has become even more promising. Traditional silicon-based solar cells face high cost and high energy consumption, which severely restricts their further development. The new all-solid-state perovskite solar cells using organometallic hal...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00H01L51/42H01L51/46
CPCH10K71/12H10K85/30H10K30/10Y02E10/549
Inventor 黄程牛高强黄维
Owner NANJING TECH UNIV