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Memory Match Line Dynamic Latch Circuit

A latch circuit and matching line technology, applied in the field of memory, can solve the problem of high power consumption of TCAM

Active Publication Date: 2017-06-06
LILING FULLRIVER ELECTRONICS & TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The voltage of ml is always flipped between the supply voltage and ground, resulting in very large power consumption in TCAM

Method used

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  • Memory Match Line Dynamic Latch Circuit
  • Memory Match Line Dynamic Latch Circuit
  • Memory Match Line Dynamic Latch Circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] In one embodiment, a memory matching line dynamic latch circuit is suitable for memory such as TCAM (ternary content addressable memory, ternary content addressable memory). Such as figure 1 As shown, the circuit includes a voltage control circuit 110, a precharge holding circuit 120 and a latch circuit 130, the voltage control circuit 110 is connected to the matching line ml of the memory, the precharge holding circuit 120 includes a control terminal and an output terminal, and the precharge holding circuit 120 The control terminal of the precharge holding circuit 120 is used to receive the control signal pch, and the output terminal of the precharge holding circuit 120 is connected to the voltage control circuit 110 and the latch circuit 130 .

[0016] The voltage control circuit 110 is used to receive the enable signal en_lp, and when the enable signal en_lp is at the first type level and the memory cell corresponding to the match line m1 is not searched, it receives...

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PUM

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Abstract

The invention relates to a dynamic latch circuit of a matched line of a memory. The dynamic latch circuit comprises a voltage control circuit, a pre-charging retaining circuit and a latch circuit, wherein the voltage control circuit is connected with the matched line of the memory; the pre-charging retaining circuit comprises a control end and an output end; the control end of the pre-charging retaining circuit is used for receiving a control signal; and the output end of the pre-charging retaining circuit is connected with the voltage control circuit and the latch circuit. The matched line is subjected to charging control through the voltage control circuit, and the matched line is turned over between a voltage after power voltage division and the ground during charging / discharging, so that the turnover voltage of the matched line is reduced and the power consumption of the memory can be effectively reduced.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a memory matching line dynamic latch circuit. Background technique [0002] TCAM (ternary content addressable memory) is a ternary content addressable memory, which is mainly used for ACL (Access Control List, access control list) lookup of network routing chips. TCAM can compare logic "1" and logic "0", and there is also a state that "don't care" does not compare, so it is called three-state comparison. [0003] The storage units of TCAM form an array, all storage units on a row are hung on ml (match line, matching line), when all storage units in this row match, ml=1, when there are more than or equal to 1 storage unit When it does not match, it will mismatch (mismatch), and ml is pulled down to 0. In a TCAM storage array, there are usually only a few memory cell rows that match, while other memory cell rows are in the state of mismatch. The state of each memory cell row is us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C15/04
CPCG11C15/04
Inventor 郭敏谢海春蒋汉柏廖北平
Owner LILING FULLRIVER ELECTRONICS & TECH LTD