Mark, display apparatus, and method for monitoring exposure and etching process stability by use of mark

Abstract

The invention provides a mark used for monitoring exposure and etching process stability, a display apparatus provided with the mark, and a method for monitoring exposure and etching process stability by use of the mark. The mark comprises a plurality of metal mark lines with bending parts; the plurality of metal mark lines are arranged at intervals in parallel, wherein the interval between two adjacent metal mark lines with the smallest interval is smaller than a resolution limit of the exposure process; the interval between two adjacent metal mark lines with the largest interval is greater than a photomask design value, wherein the interval between at least one pair of adjacent metal mark lines among the plurality of metal mark lines is equal to the interval between two adjacent metal wires in a to-be-etched region.

Description

technical field [0001] The invention belongs to the field of TFT manufacturing, and more specifically relates to a method for monitoring a TFT manufacturing process and a display device. Background technique [0002] Since the TFT LCD panel made by the Cu process can better meet the customer's demand for large-size, high-resolution LCD displays, the introduction of the Cu process has become a development direction of the panel industry. At present, the Cu etching technology is relatively unstable, and the etching ability is limited, which needs to be further improved. [0003] In the general Cu process product design, since all the metal traces inside the effective area will gather and gather at various pads in the peripheral fan-out area, resulting in dense and slender out-of-plane traces, this part of the area is prone to etching Endless questions. The reasons for the above problems are as follows: 1. Due to the dense and slender lines here and the small line width, ther...

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Problems solved by technology

[0003] In the general Cu process product design, since all the metal traces inside the effective area will gather and gather at various pads in the peripheral fan-out area, resulting in dense and slender out-of-plane traces, this part of the area is prone to etching Endless questions

The reasons for the above problems are as follows: 1. Due to the dense and slender lines here and the small line width, there are long slits, and the etching solution is difficult to contact with Cu, resulting in insufficient etching and etching residues; 2. There are many metal trace bending parts in this part. During the post-baking process of the exposure process, this part is prone to defects caused by photoresist flow and collapse, which makes the photoresist coverage area in this area larger and causes metal traces. 3. Because the process exposure process and etching process cannot achieve perfect stability, there are always certain process fluctuations, especially with the accumulation of production time, the process deviation will gradually accumulate and become larger; 4. Due to other Due to various factors, local fluctuations often occur in the process, resulting in deviations in local process specifications, and the dense and slender areas on the periphery are very sensitive to process fluctuations or local changes, and small fluctuations may affect the process. Stability and product quality

[0004] However, due to the phenomenon that a large number of peripheral traces are not completely etched in various products at present, and there is a lack of effective and scientific monitoring mechanism in the peripheral trace area, it is impossible to detect abnormalities in time, resulting in huge yield loss and economic loss

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