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Multi-Voltage Complementary Metal Oxide Semiconductor Integrated Circuits Based On Always-On N-Well Architecture

A technology of oxide semiconductors and complementary metals, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of large shrinkage and achieve the effect of saving the area of ​​silicon wafers

Active Publication Date: 2016-12-07
MEDIATEK SINGAPORE PTE LTD SINGAPORE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the required reduction in NW-to-NW spacing is not as great as for CMOS devices

Method used

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  • Multi-Voltage Complementary Metal Oxide Semiconductor Integrated Circuits Based On Always-On N-Well Architecture
  • Multi-Voltage Complementary Metal Oxide Semiconductor Integrated Circuits Based On Always-On N-Well Architecture
  • Multi-Voltage Complementary Metal Oxide Semiconductor Integrated Circuits Based On Always-On N-Well Architecture

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Embodiment Construction

[0029] The specification and claims use certain terms to refer to particular components. Those skilled in the art can understand that manufacturers may use different names to refer to the same component. This document distinguishes components not by difference in name, but by difference in function. In the following description and claims, the word "comprises" is open-ended, so it should be read as "including, but not limited to...".

[0030] overview

[0031] figure 1 A schematic diagram showing the power management mechanism adopted by the MV CMOS IC 100 under the general operation of the embodiment of the present application. MV CMOS IC 100 includes domain 110, domain 120 and domain 130, wherein domain 110 operates according to a first supply voltage, domain 120 operates according to a second supply voltage, and domain 130 operates according to a third supply voltage. 110 , one or more of domain 120 and domain 130 may be configured to be powered off during PPD. For pu...

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Abstract

Examples of multi-voltage (MV) complementary metal oxide semiconductor (CMOS) integrated circuits (ICs) based on always-on N-well architecture are described. A MV CMOS IC may include first CMOS cells, second CMOS cells, N-wells and always-on taps. Each first CMOS cell may have a supply terminal configured to receive a local supply voltage, and an N-well (NW) terminal configured to receive a global supply voltage. The second CMOS cells may include always-on CMOS cells. Each second CMOS cell may have a supply terminal configured to receive the global supply voltage, and an NW terminal configured to receive the global supply voltage. The NW terminal of at least one of the second CMOS cells and the NW terminal of at least one of the first CMOS cells may be formed in a first N-well of the one or more N-wells.

Description

technical field [0001] The present invention relates to a complementary metal oxide semiconductor (CMOS) integrated circuit (integrated circuits, IC), more particularly, to a multi-voltage (multi-voltage, MV) using an always-on N-well architecture CMOS ICs. Background technique [0002] It is important for portable or mobile electronic systems to have a long battery life, typically hours between charges, but sometimes days or even weeks. Therefore, the CMOS ICs used in today's portable systems generally require more advanced power management mechanisms, which include so-called "partial power down (PPD)" periods. During PPD, unused parts of the system (that is, some areas of the CMOS system), generally referred to as "power down (PD) domains", are powered off to reduce standby power consumption. "CMOS IC" and "CMOS system" are used interchangeably herein. [0003] When a region of a CMOS IC is powered down while in PPD, some devices in that PD domain may need to continue o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/092
CPCH01L27/0921H01L21/823892H01L27/0207H01L27/092H01L27/11807H01L2027/11851
Inventor 森迪尔库玛尔·贾亚帕纳维安库玛尔·拉玛钱德朗·阿鲁穆甘
Owner MEDIATEK SINGAPORE PTE LTD SINGAPORE