Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of magnetron sputtering device and magnetron sputtering method

A magnetron sputtering device and magnetron sputtering technology, applied in sputtering coating, metal material coating process, vacuum evaporation coating, etc., to achieve uniform deposition rate, high uniformity of film formation, and shorten production cycle Effect

Active Publication Date: 2019-05-21
成都芯曌科技有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the technical problem of the uniformity of the film prepared by the existing magnetron sputtering, the present invention provides a magnetron sputtering device and a magnetron sputtering method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of magnetron sputtering device and magnetron sputtering method
  • A kind of magnetron sputtering device and magnetron sputtering method
  • A kind of magnetron sputtering device and magnetron sputtering method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and implementation examples. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0031] The present invention is described in conjunction with the following specific embodiments.

[0032] Please refer to figure 1 , The magnetron sputtering device 1 of the present invention includes a supporting mechanism 11, a target material 12, a magnetic force generating mechanism 13, a power source mechanism 14, a loading mechanism 15, a rotating mechanism 16 and a base 151. The target 12 is fixed on the supporting mechanism 11, and the supporting mechanism 11 houses the magnetic force generating mechanism 13. The power supply mechanism 14 is arranged on the supporting mech...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a magnetron sputtering device. The magnetron sputtering device comprises a magnetic generation mechanism, at least one target and a rotatable base; the magnetic generation mechanism is parallel to the target; a substrate is opposite to the target; the magnetic generation mechanism generates a magnetic line; and the magnetic line is mapped onto the surface of the target to form multiple etching areas uniformly and annularly distributed on the surface of the target. The invention further relates to a magnetron sputtering method; and the magnetron sputtering method comprises the following steps: the target is provided; the multiple etching areas are uniformly and annularly distributed on the surface of the target; and the rotatable base is provided, and is opposite to the target, so that the substrate passes through each etching area formed on the surface of the target during rotating.

Description

【Technical Field】 [0001] The invention relates to the technical field of physical vapor deposition, in particular to a magnetron sputtering device and a magnetron sputtering method. 【Background technique】 [0002] Magnetron sputtering is a type of physical vapor deposition and can be used to prepare metals, semiconductors, insulators and other materials. Magnetron sputtering introduces a magnetic field on the surface of the target cathode and uses the magnetic field to confine the charged particles to increase the plasma density, thereby achieving a higher sputtering rate. The magnetron sputtering coating process has good process controllability, and the product process can maintain long-term stability, which is very suitable for continuous coating production. However, current conventional devices cannot precisely control the thickness of the film during large-area film formation, so the maximum width of the target material is limited. Therefore, when preparing large-area films,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35
CPCC23C14/352
Inventor 闫宗楷黄楷向勇李响彭志
Owner 成都芯曌科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products