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Large-dynamic-range RF voltage sensor and method for voltage mode RF bias application

A voltage sensor, voltage range technology, applied in the direction of measuring current/voltage, instruments, circuits, etc., can solve problems such as reduced accuracy

Active Publication Date: 2016-12-14
LAM RES CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Voltage sensors have a dynamic range that is typically limited to less than 40 dB where accuracy degrades at low voltages

Method used

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  • Large-dynamic-range RF voltage sensor and method for voltage mode RF bias application

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Embodiment Construction

[0095] For certain substrate processing, higher and higher bias RF voltages are required. For example, a high voltage bias pulse (HVBP) may require a voltage sensor capable of detecting a VCI of peak voltages up to 2500V. Voltage sensors that include a single voltage divider per channel have limited accuracy at low voltages. The higher the peak voltage, the more pronounced this becomes. To overcome this limitation, a voltage sensor may include multiple measurement channels, such that a first channel is used to measure voltages in a first (or low) range, and a second voltage measurement channel is used to measure voltages in a second (or lower) range. high) range. The output of a single voltage divider may be provided to each measurement channel, with each measurement channel having a corresponding signal processing circuit. While channels can be used to detect corresponding voltage ranges, channels designed to detect low range voltages can be overloaded and / or damaged when ...

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Abstract

The invention relates to large-dynamic-range rf voltage sensor and method for voltage mode rf bias application. A voltage sensor of a substrate processing system including a multi-divider circuit, a clamping circuit and first and second outputs. The multi-divider circuit receives a RF signal indicative of a RF voltage at a substrate. The multi-divider circuit includes dividers of respective channels and outputting first and second reduced voltages based on the received RF signal. The reduced voltages are less than the RF voltage. The clamping circuit clamps the first reduced voltage to a first predetermined voltage when the RF voltage is greater than a second predetermined voltage or the first reduced voltage is greater than a third predetermined voltage. While the received RF signal is in first and second voltage ranges, the first and second outputs output output signals based respectively on the first and second reduced voltages. The first predetermined voltage is based on a maximum value of the first voltage range.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] The present disclosure is related to US Patent Serial No. 14 / 336355, filed July 21, 2014. The entire disclosure of this application cited is incorporated herein by reference. technical field [0003] The present invention relates to plasma processing systems, and more particularly to detecting RF voltages of electrostatic chucks in plasma processing systems. Background technique [0004] The background description provided herein is for the purpose of generally presenting the present disclosure. The work of the inventors currently named (to the extent described in this Background section) and aspects of this specification that may not qualify as prior art at the time of filing are neither expressly nor implicitly acknowledged when as the prior art of the present disclosure. [0005] Ionized gases or plasmas are commonly used in the processing and fabrication of semiconductor devices. For example, plasmas can be used...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/00H01J37/20
CPCG01R19/0084H01J37/20H01J2237/2007H01J37/32183H01J37/32155H01J37/32577H01J37/32706H01J37/32715H01J37/32935H01J37/3299G01R15/04G01R15/09G01R15/144G01R19/16576G01R19/1659H01J37/32082G01R15/26H01J2237/332H01J2237/334
Inventor 龙茂林约翰·德鲁厄里亚历克斯·帕特森
Owner LAM RES CORP
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