MOSFET/IGBT high-speed driving circuit based on linear optical coupling isolation

A drive circuit, linear optocoupler technology, applied in electrical components, electronic switches, pulse technology, etc., can solve problems such as abnormal output waveform, low operating frequency of MOSFET/IGBT drive circuit, and abnormal operation of power electronic systems

Active Publication Date: 2016-12-14
CHENGDU UNIV OF INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the main problem of the MOSFET/IGBT drive circuit is that the operating frequency is not high. Whether it is a magnetically isolated drive circuit using a high-frequency transformer or an integrated drive circuit using optocoupler isolation, the highest measured operating frequency is around 100kHz. If the drive signal If the frequency is further increased, the output waveform will be abnormal, and the power electronic system will not work normally.
[0005] When using discrete components to form an optically isolated drive circuit, the optocoupler is the key component of the drive circuit; if a switch-type optocoupler is use

Method used

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  • MOSFET/IGBT high-speed driving circuit based on linear optical coupling isolation
  • MOSFET/IGBT high-speed driving circuit based on linear optical coupling isolation

Examples

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[0022] Examples:

[0023] Such as figure 1 As shown, a MOSFET / IGBT high-speed drive circuit based on linear optocoupler isolation. The control signal is input from the drive circuit control signal input terminal 101. When the control signal is high, the first PNP transistor 106 is turned off, and the linear optocoupler There is no current through the light emitting diodes in 105, the collector and emitter of the linear optocoupler 105 are in a high impedance state, the output signal is high, and the voltage of the first capacitor 110 is approximately zero. When the control signal changes from a high level to a low level, the first PNP transistor 106 is turned on, the light-emitting diode in the linear optocoupler 105 passes current, and the collector and emitter of the linear optocoupler 105 are in a low resistance state, and the output The signal voltage begins to drop, and the third resistor 108 provides current for the linear optocoupler 105. Due to the clamping effect of the ...

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Abstract

The invention discloses an MOSFET/IGBT high-speed driving circuit based on linear optical coupling isolation. The high-speed driving circuit utilizes a variable resistance structural circuit on a collector or an emitter of a linear optical coupler and adopts a dynamic voltage comparing circuit on an output loop of the optical coupler, so that the transmission speed of a driving signal and the gradient of a rising and falling edge are improved, and thus the performance of the driving circuit is improved. The high-speed driving circuit has the advantages of fast high-speed driving speed, small volume and the like.

Description

technical field [0001] The invention relates to a MOSFET / IGBT drive technology, in particular to a MOSFET / IGBT high-speed drive circuit based on linear optocoupler isolation. Background technique [0002] The drive circuit is the bridge connecting the control circuit and the main power electronic device, and converts the control signal into a waveform and voltage suitable for the direct control input of the power electronic device. At the same time, since the main circuit of the power electronic device is a large current and high voltage, while the control circuit is a low current and low voltage, in order to avoid the interference or damage of the main circuit to the control circuit, the two need to be electrically isolated, and the driving circuit is exactly the complete This isolates the tasks of the link. [0003] For general power electronic device drive circuits, two basic functions are required, one is to have an isolation function, and the other is to perform wavefo...

Claims

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Application Information

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IPC IPC(8): H03K17/567H03K17/687H03K17/78
CPCH03K17/567H03K17/687H03K17/78
Inventor 张雪原刘俊灵
Owner CHENGDU UNIV OF INFORMATION TECH
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