Radio frequency power amplifier

Abstract

The invention discloses a radio frequency power amplifier, comprising a radio frequency amplification path, the radio frequency amplification path includes a multi-stage amplifying circuit, the multi-stage amplifying circuit includes at least one driving stage amplifier and at least one differential output stage amplifier, the output terminal of the driving stage amplifying circuit The differential output stage amplifier is connected through the interstage matching circuit, and the output terminal of the differential output stage amplifier is connected with the output matching circuit; wherein, the interstage matching circuit includes an interstage broadband balun or an interstage broadband balun impedance converter for The conversion of the radio frequency signal from unbalanced to balanced is realized, and the output matching circuit includes an output broadband balun impedance converter, which is used to convert the differential radio frequency signal into a single-ended radio frequency signal, and is coupled with the output gating circuit. The radio frequency power amplifier can realize 2G / 3G / 4G multi-band coverage with only one radio frequency amplification channel, which simplifies the architecture of the multi-mode multi-frequency radio frequency front-end chip and reduces the cost.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a radio frequency power amplifier. Background technique [0002] In the prior art, a multi-mode multi-frequency (MMMB, Multi-Mode Multi-Band) radio frequency front-end chip for 2G, 3G, 4G modes includes a GSM high-band radio frequency power amplifier, a GSM low-band radio frequency power amplifier, a 3G / 4G low-band (700-915MHz) RF power amplifier, 3G / 4G mid-band (1710-2025MHz) RF power amplifier, output matching network of each RF power amplifier, MIPI interface and controller, input channel selection switch, output frequency band selection Switches, RF antenna switches, 3G / 4G high-band RF antenna switches, etc. The two duplexer groups are located outside the MMMB RF front-end chip, and are connected to the corresponding ports of the internal output frequency band selection switch and RF antenna switch to realize the duplex function of different FDD frequency bands of ...

AI Technical Summary

Problems solved by technology

[0003] It can be seen that the structure of the multi-mode multi-frequency RF front-end chip is complex and the cost is high. It is necessary to find a method that can simplify the architecture of the multi-mode multi-frequency RF front-end chip as much as possible and effectively reduce its cost

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