Radio frequency power amplifier

A technology of radio frequency power and radio frequency amplification, which is applied in the field of microelectronics and can solve the problems of complex structure and high cost of multi-mode and multi-frequency radio frequency front-end chips.

Inactive Publication Date: 2016-12-21
ETRA SEMICON SUZHOU CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] It can be seen that the structure of the multi-mode multi-frequency RF front-end chip is complex and the cost is high. It is necessary to find a method that can simplify the architecture of the multi-mode multi-frequency RF front-end chip as much as possible and effectively reduce its cost

Method used

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Embodiment Construction

[0027] As mentioned in the background section, the existing multi-mode and multi-frequency radio frequency front-end chips have complex structures and high costs.

[0028] Based on this, an embodiment of the present invention provides a radio frequency power amplifier, including a radio frequency amplification path, the radio frequency amplification path includes a multi-stage amplifying circuit, and the multi-stage amplifying circuit includes at least one driver stage amplifier and at least one differential output stage amplifier, the output end of the driver stage amplifier is connected to the differential output stage amplifier through an interstage matching circuit, and the output end of the differential output stage amplifier is connected to the output matching circuit;

[0029] Wherein, the inter-stage matching circuit includes an inter-stage broadband balun or an inter-stage broadband balun impedance converter for realizing the conversion of radio frequency signals from ...

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Abstract

The invention discloses a radio frequency power amplifier, comprising a radio frequency amplification path, the radio frequency amplification path includes a multi-stage amplifying circuit, the multi-stage amplifying circuit includes at least one driving stage amplifier and at least one differential output stage amplifier, the output terminal of the driving stage amplifying circuit The differential output stage amplifier is connected through the interstage matching circuit, and the output terminal of the differential output stage amplifier is connected with the output matching circuit; wherein, the interstage matching circuit includes an interstage broadband balun or an interstage broadband balun impedance converter for The conversion of the radio frequency signal from unbalanced to balanced is realized, and the output matching circuit includes an output broadband balun impedance converter, which is used to convert the differential radio frequency signal into a single-ended radio frequency signal, and is coupled with the output gating circuit. The radio frequency power amplifier can realize 2G/3G/4G multi-band coverage with only one radio frequency amplification channel, which simplifies the architecture of the multi-mode multi-frequency radio frequency front-end chip and reduces the cost.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a radio frequency power amplifier. Background technique [0002] In the prior art, a multi-mode multi-frequency (MMMB, Multi-Mode Multi-Band) radio frequency front-end chip for 2G, 3G, 4G modes includes a GSM high-band radio frequency power amplifier, a GSM low-band radio frequency power amplifier, a 3G / 4G low-band (700-915MHz) RF power amplifier, 3G / 4G mid-band (1710-2025MHz) RF power amplifier, output matching network of each RF power amplifier, MIPI interface and controller, input channel selection switch, output frequency band selection Switches, RF antenna switches, 3G / 4G high-band RF antenna switches, etc. The two duplexer groups are located outside the MMMB RF front-end chip, and are connected to the corresponding ports of the internal output frequency band selection switch and RF antenna switch to realize the duplex function of different FDD frequency bands of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/19H03F3/21H03F3/24
CPCH03F3/19H03F3/21H03F3/245
Inventor 陈俊刘磊黄清华程忍郭亚炜
Owner ETRA SEMICON SUZHOU CO LTD
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