Cage boat for growing SiO2 on wafer and growth method

Abstract

The invention discloses a cage boat for growing SiO2 on a wafer and a growth method. The cage boat comprises a first semicircular cylinder, a second semicircular cylinder and at least two fixed rods, wherein a first air inlet is formed in the first semicircular cylinder, a second air inlet is formed in the second semicircular cylinder, the first semicircular cylinder and the second semicircular cylinder are detachably spliced to form a cylindrical structure, an axial direction of the first semicircular cylinder is a first direction, the fixed rods are fixedly arranged at an inner side of the first semicircular cylinder along the first direction, the first direction is the axial direction of the first semicircular cylinder, fixed grooves formed in the same position of each fixed rod along the first direction form a fixed groove group, and the fixed groove group is used for fixing at least one silicon chip pasted with the wafer. A SiO2 film prepared by the cage boat for growing the SiO2 on the wafer and the growth method, provided by the embodiment of the invention, is relatively good in quality, moreover, the working efficiency is relatively high, and the equipment investment cost is relatively low.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a cage and a growth method for growing silicon dioxide on a wafer. Background technique [0002] Wafer refers to the silicon wafer used in the production of silicon semiconductor integrated circuits and the gallium nitride (GaN) epitaxial wafer used in the production of light emitting diodes (LED, Light Emitting Diode). Because of its circular shape, it is called a wafer. Various circuit element structures can be processed on the wafer, and become integrated circuit products with specific electrical functions. [0003] Silicon dioxide (SiO2) deposition is an important process in the wafer processing process, and the SiO2 grown on the wafer is used as a passivation layer and a masking film. In the prior art, chamber type plasma enhanced chemical vapor deposition (PECVD, Plasma Enhanced Chemical Vapor Deposition) process is generally used to grow S i o 2 . However, due t...

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Problems solved by technology

[0004] The object of the present invention is to propose a cage and a growth method for growing silicon dioxide on a wafer, which can solve the problem of loose film quality, dense pinholes, low operating efficiency, and high density of silicon dioxide prepared in the prior art. The problem of high investment cost of equipment

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