Light emitting diode chip
A technology of light-emitting diodes and chips, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as fracture, lower reliability of integrated chips, and difficult mixed connections
Pending Publication Date: 2017-01-11
EPISKY
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Problems solved by technology
This kind of integrated chip has the following problems. One is that the layout of the electrode lines is limited by the way of jumping, and it is difficult to realize complex mixed connections; There is a risk of fracture, which reduces the reliability of the integrated chip; the third is that the current distribution in each light-emitting diode unit 20 fails to reach a better level
Method used
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Embodiment Construction
[0037] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.
[0038] The first embodiment of a light emitting diode chip of the present invention is as follows: Figure 2 to Figure 6 as shown, figure 2 is a top view of the first embodiment of the present invention, image 3 yes figure 2 Sectional view along line A-A. The light-emitting diode chip includes a substrate 1, and four light-emitting diode units 2 are distributed on one surface of the substrate 1. There is an isolation area 3 between adjacent light-emitting diode units 2 to separate the light-emitting diode units 2 from each other; the specific distribution method can be found in the substrate 1, the first-type semiconductor layer (N-type semiconductor layer) 21, the light-emitting layer 22, the second-type semiconductor layer (P-type semiconductor layer) 23, and the current spreading layer 24 are sequentially grown epitaxially, ...
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A light emitting diode chip disclosed by the present invention comprises a substrate, a plurality of light emitting diode units which are isolated mutually are distributed on the substrate, and a first type extension electrode and a second type extension electrode are distributed on each light emitting diode unit. A transparent insulating layer covers the plurality of light emitting diode units, a plurality of conductive channels penetrating the transparent insulating layer are arranged in the transparent insulating layer, and the first type extension electrode and the second type extension electrode of each light emitting diode unit are communicated with the upper end face of the transparent insulating layer via the conductive channels separately. The transparent insulating layer is equipped with a first type electrode, a second type electrode and a plurality of electrode connection layers, the first type electrode and the second type electrode are connected with the first type extension electrodes and the second type extension electrodes on the different light emitting diode units separately and electrically via the conductive channels, and the same type extension electrodes and the different type extension electrodes on the different light emitting diode units are electrically connected with the electrode connection layers via the conductive channels. According to the present invention, the flexible electric connection between the light emitting diode units can be realized, and the current distribution is uniform.
Description
technical field [0001] The invention relates to the field of light-emitting diode chip manufacturing, in particular to a light-emitting diode chip integrated by a plurality of light-emitting diode units. Background technique [0002] The integrated light-emitting diode chip is to integrate multiple light-emitting diode units on a substrate, and then form an electrical connection between each light-emitting diode unit, and finally combine it into a light-emitting chip and connect it to an external power source to emit light. [0003] attached figure 1 Shown is a cross-sectional structure diagram of an existing integrated light-emitting diode chip, in which each light-emitting diode unit 20 is integrated on a substrate 1a, and the light-emitting diode units 20 are electrically connected by a jumper electrode layer 30, and the jumper electrode layer 30 There is an insulating layer 60 below and between the LED units 20 , and the LED units at the head and tail are provided with ...
Claims
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Login to View More IPC IPC(8): H01L33/62H01L33/36
CPCH01L33/387H01L33/62
Inventor 吴哲雄吕瞻暘曾晓强刘建科林聪辉白梅英
Owner EPISKY