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Driving device of IGBT

A driving device and driver technology, applied in the direction of output power conversion devices, electrical components, etc., can solve the problems of high cost, poor stability, and difficulty in integration, and achieve the effect of reducing device cost and power consumption and improving stability

Inactive Publication Date: 2017-01-18
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, high-power high-speed analog amplifiers have high power consumption, are difficult to manufacture and debug, have high cost, poor stability, and are not easy to integrate.

Method used

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  • Driving device of IGBT

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Embodiment Construction

[0022] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0023] An IGBT driving device provided by the present invention directly uses a digital method to synthesize an analog signal to drive an IGBT, that is, to use a switch-type IGBT driver in the prior art to directly synthesize a voltage curve for driving an IGBT at a gate of the IGBT.

[0024] The embodiment of the driving device of IGBT in the present invention is as figure 1 As shown, specifically:

[0025] The device includes a high-speed A / D conversion module, a capacitor, and a digital controller, a switch type IGBT driver a...

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Abstract

The invention provides a driving device of an IGBT. The driving device comprises a high-speed A / D conversion module, a capacitor, and a digital controller, a switching type IGBT driver and a resistor which are connected in sequence, wherein the other end of the resistor is simultaneously connected to a gate of the IGBT, the capacitor and the high-speed A / D conversion module; the other end of the capacitor is grounded; and the other end of the high-speed A / D conversion module is connected to the digital controller. Compared with the prior art, the driving device of the IGBT provided by the invention does not need a high-power high-speed analog amplifier, reduces device cost and power consumption, and improves the stability of a system in which the IGBT locates.

Description

technical field [0001] The invention relates to the field of driving technology of power electronic power devices, in particular to an IGBT driving device. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. Widely used in variable current systems such as AC motors, frequency converters, switching power su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08
Inventor 温家良陈中圆钟庆李金元邹格王志霞
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD