A logic operation circuit and operation method

Abstract

The invention discloses a logic operation circuit and an operation method. 16 Boolean logic operations such as AND, OR and NAND are realized based on a regulation and control characteristic of multi-end signal input of a 1T1R device; logic operation results are stored in the 1T1R device in a nonvolatile resistance state, so a logic operation function and a data storage function are realized in the single device, i.e., storage and computation are fused; and a device foundation is laid for transcending the limitation of the information device Moore's law and for breaking through the von Neumann Bottleneck in a computer architecture. The 1T1R device provided by the method can be applied to the fields of novel solid-state memories, logic arithmetic units, programmable gate arrays and systems on chip as a basic unit, and a new road for promotion of a novel computer architecture is provided.

Description

technical field [0001] The invention belongs to the field of microelectronic devices, and more specifically relates to a logic operation circuit based on a 1T1R (one transistor and one RRAM) device structure and a logic operation method thereof. Background technique [0002] With the advent of the "big data" era, people have put forward higher requirements for future non-volatile, high-density, low-power storage devices, and pure performance improvement can no longer meet the growing real-time data processing tasks. This new data processing architecture has gradually become a research hotspot. Different from the logic operation using the charge or voltage of the transistor in the past, a new logic operation method uses the physical state of the device as a variable to perform logic operations, that is, state logic operations. Using the resistance state of RRAM as a logic signal to perform logic operations has made great progress. This state logic operation method is expecte...

AI Technical Summary

Problems solved by technology

However, most of the existing studies have not considered the problems faced by RRAM in industrial integration. The existing industrial integration technology mainly uses the 1T1R device structure

In fact, when RRAM and transistors are integrated into a 1T1R structure, the operating point of RRAM will change, and most logic operation methods are no longer applicable. Chinese patent CN201410093949.0 proposes a logic operation circuit for 1T1R arrays, but using The number of transistors is large, the preparation is complicated, and the non-volatile utilization of the device is limited

Images