Passivation contact structure of selective polycrystalline silicon thin film and preparation method thereof

A polysilicon thin film, contact structure technology, applied in the direction of climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of mass production of passivation contact technology, etc., to prevent damage to passivation contact, prevent The effect of current loss and efficiency improvement

Active Publication Date: 2017-02-22
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims at the technical problem that the passivation contact technology cannot be produced on a large scale in the prior art, and provides a passivation contact structu...

Method used

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  • Passivation contact structure of selective polycrystalline silicon thin film and preparation method thereof
  • Passivation contact structure of selective polycrystalline silicon thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Such as figure 1 As shown, the passivation contact structure of the selective polysilicon thin film provided by the present invention is prepared with a layer of silicon dioxide layer 2 on the surface of crystalline silicon 1, the thickness of the silicon dioxide layer 2<2 nm, and on the surface of the silicon dioxide layer 2 A doped polysilicon film 3 is prepared on the surface, and the doped polysilicon film 3 has different thicknesses in different regions, specifically, the region without metal contact has a first thickness 3a, and the region with metal contact has a second thickness 3b, and the first The thickness 3a is smaller than the second thickness 3b, the range of the first thickness is 5-2000 nm, and the range of the second thickness is 30-70000 nm; the metal electrode 4 is formed on the surface of the second thickness region of the polysilicon film.

Embodiment 2

[0027] Such as figure 2 As shown, the preparation method of the passivation contact structure of the selective polysilicon thin film of the present embodiment comprises the following steps:

[0028] S1: Wafer cleaning:

[0029] S2: Preparation of surface silicon oxide: prepare a silicon dioxide layer with a thickness of 1.5 nm by thermal oxidation process;

[0030] S3: Preparation of polysilicon film: Deposit phosphorus-doped or boron-doped polysilicon film by low-pressure chemical vapor deposition (LPCVD), and the thickness of the polysilicon film is 200 nm;

[0031] S4: printing a mask on the surface of the polysilicon film;

[0032] S5: Etching of the polysilicon film: using HF / HNO3 solution to etch the polysilicon film to reduce its thickness to 70 nm to form a first thickness region;

[0033] S6: removing the mask layer, the unetched polysilicon thin film area under the mask layer is the second thickness area;

[0034] S7: Prepare electrodes: prepare metal electrodes...

Embodiment 3

[0036] Such as figure 2 As shown, the preparation method of the passivation contact structure of the selective polysilicon thin film of the present embodiment comprises the following steps:

[0037] S1: Wafer cleaning:

[0038] S2: Preparation of surface silicon oxide: prepare a silicon dioxide layer with a thickness of 1.3nm by hot nitric acid process;

[0039] S3: Preparation of polysilicon film: Deposit phosphorus-doped or boron-doped polysilicon film by low-pressure chemical vapor deposition (LPCVD), and the thickness of the polysilicon film is 100 nm;

[0040] S4: printing a mask on the surface of the polysilicon film;

[0041] S5: Etching of the polysilicon film: using HF / HNO3 solution to etch the polysilicon film to reduce its thickness to 50 nm to form a first thickness region;

[0042] S6: removing the mask layer, the unetched polysilicon thin film area under the mask layer is the second thickness area;

[0043] S7: Prepare electrodes: prepare metal electrodes on...

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Abstract

The invention discloses a passivation contact structure of a selective polycrystalline silicon thin film. A preparation method comprises the following steps: preparing one silicon dioxide layer with the thickness of less than 2nm on the surface of crystalline silicon, preparing a doped polycrystalline silicon thin film on the surface of the silicon dioxide layer, wherein the doped polycrystalline silicon thin film has a first thickness in a nonmetallic contact region and a second thickness in a metallic contact region, and the first thickness is less than the second thickness, and then forming a metal electrode on the surface of the second thickness region of the polycrystalline silicon thin film. Meanwhile, the invention also discloses a method for preparing the passivation contact structure of the selective polycrystalline silicon thin film. The passivation contact structure of the selective polycrystalline silicon thin film has the advantages that the traditional screen printing technology can be effectively combined with a passivation contact technology, the passivation contact technology can be beneficially popularized to mass production, and efficiency of a solar cell is effectively improved.

Description

technical field [0001] The invention relates to a passivation contact structure of a solar cell, in particular to a passivation contact structure of a selective polycrystalline silicon film and a preparation method thereof, belonging to the technical field of solar cell preparation. Background technique [0002] In recent years, passivation contact technology has received extensive attention in the field of crystalline silicon solar cells. Among them, the Fraunhofer Institute for Solar Energy Systems in Germany has developed a passivation contact solar cell with an efficiency of 25.1%. The passivation contact adopts tunneling A silicon dioxide layer, and a polysilicon film stacked on the tunneling silicon dioxide layer. The passivated contact solar cell adopts the vacuum evaporation method to prepare metal electrodes, which cannot be mass-produced in the short term. Contents of the invention [0003] The present invention aims at the technical problem that the passivati...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/0216H01L31/18
CPCH01L31/02167H01L31/022425H01L31/1876Y02E10/50Y02P70/50
Inventor 陈达明崔艳峰陈奕锋杨阳
Owner TRINA SOLAR CO LTD
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