Memory self-inspection and correction system and method

A self-checking and memory technology, applied in the direction of responding to errors, etc., can solve problems such as understanding, avoid errors and improve experience.

Active Publication Date: 2017-03-08
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the user cannot understand the specific content of the error ba

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory self-inspection and correction system and method
  • Memory self-inspection and correction system and method
  • Memory self-inspection and correction system and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] For ease of understanding, the terms involved in the present invention are briefly described below:

[0015] Configuration serial detection (Serial Presence Detect, SPD): A set of configuration information about memory, such as frequency, voltage, number of row addresses / column addresses, bit width, value range of various main operation timing parameters, etc. The SPD is stored in an Electrically Erasable Programmable Read-Only Memory (EEPROM) on the internal memory. The configuration information in the SPD can be obtained by the BIOS and used to initialize the memory.

[0016] The present invention mainly relates to the frequency of internal memory (represented by Freq hereinafter) and parameters related to reading and writing. The parameters related to reading are tRP, tRCD, tRAS and tCL, and the parameters related to writing are tRP, tRCD, tCWL and tWR. The SPD includes the value ranges of Freq and tCL, wherein the value range of Freq is an interval, and the value r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention provides a memory self-inspection and correction method that is applied to the electronic device. The method comprises: an obtaining step of obtaining serial presence detect (SPD) from a memory, and setting each parameter of the memory; a first determining step of initializing the memory and determining whether memory initialization makes an error; an adjustment step of when the memory initialization makes an error, adjusting values of parameters associated with read or write by using a preset rule; and a setting step of when none of the adjusted values of parameters associated with read or write is the maximum value of each parameter, setting each parameter in the memory by using the adjusted configuration information, and re-initializing the memory; a second determination step of when the memory initialization makes no error, performing pilot run on the initialized memory, and determining whether the pilot run makes an error; and a first reminder step of when the pilot run makes an error, prompting the user that the memory initialization makes an error. The present invention provides a memory self-inspection and correction system.

Description

technical field [0001] The invention relates to a memory self-checking correction system and method. Background technique [0002] When the computer is turned on, the basic input output system (Basic Input Output System, BIOS) initializes various hardware of the computer, including memory. If an error occurs in the process of initializing the memory, the operating system of the computer cannot be started. At this time, the BIOS prompts the user for an error in a preset manner (for example, the buzzer emits a sound composed of specific long and short sounds). However, the user cannot understand the specific content of the error from the prompt sound, and the user needs to correct the error manually. Contents of the invention [0003] In view of the above, it is necessary to provide a memory self-checking and correcting system and method for automatically adjusting various parameters of the memory when memory initialization errors occur, so that the memory initialization su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F11/07
Inventor 黄益贤
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products