Intra-cluster memory line-column two-stage switching circuit in array processor
A technology for storing access and exchanging circuits, which is applied in memory systems, electrical digital data processing, instruments, etc., and can solve problems such as increased circuit complexity, complex storage architecture, and high access complexity
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[0024] The structure diagram of the row and column two-level switch circuit for storage access in the cluster is shown in the following figure: figure 1 As shown, it is suitable for parallel access of 4*4 array processors to 16 distributed storage blocks, so 16 sets of read / write request interface information from the processor side and 16 sets of read / write information for accessing distributed storage blocks are required. Only one set of read / write request interface information is listed in Table 1, and the pin meanings of the other 15 sets of read / write request interface information in the cluster are the same.
[0025] The description of the input and output interfaces of the allocation module circuit (allot) is shown in Table 2; the description of the input and output interfaces of the selection module circuit (RAM_arbiter) is shown in Table 3; the description of the input and output interfaces of the row control unit circuit (H_top) is shown in Table 4 ; The input and ou...
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