Optimization Method of Passivation of Cavity Sidewall in Active Region of Ridge-stripe Semiconductor Laser
An optimization method and semiconductor technology, which is applied in the field of semiconductor technology, can solve problems such as damage and dangling bonds that cannot be repaired, adverse effects on laser performance, etc., and achieve strong bonding ability, repair etching damage, and reduce negative effects.
Active Publication Date: 2019-02-15
UNIV OF SCI & TECH BEIJING
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Problems solved by technology
According to this process, there is a problem that the oxide layer above the GaN section produced after dry etching will be covered with SiO 2 coverage, and the damage caused by etching and defects such as dangling bonds cannot be repaired, which will adversely affect the performance of the laser
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[0025] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.
[0026] The structure of the traditional ridge-stripe semiconductor laser makes it possible to directly coat a layer of SiO on the sidewall of the ridge-stripe 2 layer, which acts as a confinement layer to confine the current within the current path from the ridge to the active layer, lowering the threshold current. Due to the SiO plating 2 Before, the exposed GaN surface would inevitably be oxidized, and the damage caused by dry etching to the GaN surface could not be effectively repaired, and the addition of SiO plating 2 At the same time, new damage will be introduced, so there is still room for further improvement in the light extraction ability of the laser.
[0027] In order to overcome the above disadvantages and improve the performance of the ri...
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The present invention relates to the field of semiconductor processes, and provides a ridge-shaped semiconductor laser active cavity side wall passivation optimization method. The method comprises: etching a GaN sample to form a P-GaN active ridge; directly depositing an Al thin layer using an ALD without a step of removing photoresist; then depositing SiO2; stripping the photoresist to coat an Al thin layer between all surfaces exposed by etching and the SiO2 layer; finally, repeating the standard photoetching step to perform process operations such as windowing an N-type area and coating an extension electrode. The method can effectively restore influences of surface damages caused by etching and O elements attached to the surface after etching on electron and electron hole composition, and an oxide layer formed after oxidation can further protect the P-GaN part, thereby effectively improving the performance of a laser and prolonging the service life thereof.
Description
technical field [0001] The invention relates to the field of semiconductor technology, in particular to an optimization method for passivating the side wall of a cavity in the active region of a ridge-stripe semiconductor laser. Background technique [0002] The working principle of a semiconductor laser is to generate sufficient inversion of the particle number distribution, so that the stimulated radiation is greater than the absorption, resulting in optical gain, and the generated light is internally reflected at the front and back of the resonator to a certain intensity and then emerges to form laser light. One of the current mainstream laser structures is the bar laser. The strip structure adopted for the confinement of carriers and photons in the active region in the junction plane direction (lateral direction) is an important milestone in the development history of semiconductor lasers. The strip laser manufactures a strip structure in the direction parallel to the p...
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IPC IPC(8): H01S5/22H01S5/34
CPCH01S5/22H01S5/34
Inventor 王瑾郑新和刘三姐侯彩霞何荧峰李美玲
Owner UNIV OF SCI & TECH BEIJING