Ridge-shaped semiconductor laser active area cavity side wall passivation optimization method
An optimization method and active region technology, applied in the field of semiconductor technology, can solve problems such as damage and dangling bonds and other defects that cannot be repaired, and adverse effects on laser performance, so as to achieve strong bonding ability, repair etching damage, and reduce negative effects Effect
Active Publication Date: 2017-03-15
UNIV OF SCI & TECH BEIJING
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Problems solved by technology
According to this process, there is a problem that the oxide layer above the GaN section produced after dry etching will be covered with SiO 2 coverage, and the damage caused by etching and defects such as dangling bonds cannot be repaired, which will adversely affect the performance of the laser
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[0025] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.
[0026] The structure of the traditional ridge-stripe semiconductor laser makes it possible to directly coat a layer of SiO on the sidewall of the ridge-stripe 2 layer, which acts as a confinement layer to confine the current within the current path from the ridge to the active layer, lowering the threshold current. Due to the SiO plating 2 Before, the exposed GaN surface would inevitably be oxidized, and the damage caused by dry etching to the GaN surface could not be effectively repaired, and the addition of SiO plating 2 At the same time, new damage will be introduced, so there is still room for further improvement in the light extraction ability of the laser.
[0027] In order to overcome the above disadvantages and improve the performance of the ri...
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Abstract
The invention provides a ridge-shaped semiconductor laser active area cavity side wall passivation optimization method belonging to the semiconductor technology field. The ridge-shaped semiconductor laser active area cavity side wall passivation optimization method comprises steps that by etching a GaN sample, a P-GaN active area ridge is formed, and an Al thin layer is deposited by directly using ALD without carrying out a step of removing photoresist; an SiO2 layer is deposited; the photoresist is stripped, and the Al thin layer is disposed between the exposed surface after the etching process and the SiO2 layer in a coated manner; the above mentioned standard photoetching step is repeated, and an N-type area windowing operation and an extension electrode coating operation are carried out. Influences of surface damages caused by the etching and O elements attached to the surface after the etching on electron hole recombination are effectively restored, and an oxide layer formed after oxidation is used to protect the P-GaN part, and therefore performance of a laser is improved, and the service lifetime of the laser is prolonged.
Description
technical field [0001] The invention relates to the field of semiconductor technology, in particular to an optimization method for passivating the side wall of a cavity in the active region of a ridge-stripe semiconductor laser. Background technique [0002] The working principle of a semiconductor laser is to generate sufficient inversion of the particle number distribution, so that the stimulated radiation is greater than the absorption, resulting in optical gain, and the generated light is internally reflected at the front and back of the resonator to a certain intensity and then emerges to form laser light. One of the current mainstream laser structures is the bar laser. The strip structure adopted for the confinement of carriers and photons in the active region in the junction plane direction (lateral direction) is an important milestone in the development history of semiconductor lasers. The strip laser manufactures a strip structure in the direction parallel to the p...
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Login to View More IPC IPC(8): H01S5/22H01S5/34
CPCH01S5/22H01S5/34
Inventor 王瑾郑新和刘三姐侯彩霞何荧峰李美玲
Owner UNIV OF SCI & TECH BEIJING