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Photoresist developing solution

A developer and photoresist technology, applied in optics, photography, optomechanical equipment, etc., can solve the problems of poor process margin of developer, limited types of photoresist, unstable developing performance, etc., and achieve good developing effect, Excellent process margin and long developing time

Active Publication Date: 2017-03-22
绵阳艾萨斯电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, after successive development of different photoresists, the development performance of the developer will become unstable for each photoresist after the development treatment, and the development effect will gradually deteriorate. Only by changing a new developing solution can the development of new photoresist be carried out, and it cannot be used for the treatment of various photoresists only by adjusting the exposure amount and film thickness. The process margin of this kind of developing solution is poor. Adaptable photoresist types are limited

Method used

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  • Photoresist developing solution
  • Photoresist developing solution
  • Photoresist developing solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The developing solution takes 5 parts by weight of nonionic surfactant, 3 parts by weight of inorganic base, and 92 parts by weight of water. Inorganic bases are common alkali metal hydroxides, weak basic compounds and the like. For the convenience of comparative examples, potassium hydroxide is all selected as the alkaline compound of the developer.

Embodiment 2

[0029] The developer was 8 parts by weight of nonionic surfactant, 5 parts by weight of potassium hydroxide, and 87 parts by weight of water.

Embodiment 3

[0031] The developer was 6 parts by weight of nonionic surfactant, 3.5 parts by weight of potassium hydroxide, and 90.5 parts by weight of water.

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Abstract

The invention discloses a photoresist developing solution, which comprises water, a nonionic surfactant and inorganic base, wherein the nonionic surfactant comprises castor oil polyoxyethylene ether and a chemical compound shown in a structural formula I in the description. The developing solution provided by the invention has an excellent process redundancy, can be used for process of various photoresist only by regulating exposure quantity and film thickness, and has a long developing aging and a wide application range of developing.

Description

technical field [0001] The present invention relates to the field of photoresist developing solution used in the manufacture of semiconductor devices, flat panel displays, LEDs, inverted packages, thorns and precision sensors. Background technique [0002] Photoresist (also known as photoresist) refers to an etching-resistant thin film material whose solubility changes through irradiation or radiation of ultraviolet light, excimer laser, electron beam, ion beam, X-ray and other light sources. Development is the process of removing the exposed photoresist. To avoid the photoresist changing its chemical structure due to other possible side reactions, it should be developed as soon as possible after exposure. The photoresist is often developed using a developer solution. [0003] The existing common developing solution composition is generally a combination of surfactant, alkaline compound and water, and the purpose of its developing treatment is generally to obtain a pattern...

Claims

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Application Information

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IPC IPC(8): G03F7/32
CPCG03F7/322
Inventor 罗利
Owner 绵阳艾萨斯电子材料有限公司
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