Board-level packaging structure and manufacturing method of a chip

Abstract

The present invention provides a chip board-level packaging structure and a manufacturing method, wherein the packaging structure includes: a substrate on which at least two accommodation spaces are formed; an IGBT chip and a driver chip are respectively embedded in the corresponding accommodation spaces; formed on the substrate , the first dielectric layer on the surface of the IGBT chip and the driver chip, at least part of the electrodes of the IGBT chip and the driver chip are exposed and covered with the first metal plating layer, and the gate of at least one IGBT chip passes through the first metal plating layer formed by the first The circuit layer is electrically connected to the control electrode of the driver chip; the second dielectric layer is covered on the first dielectric layer and the first circuit layer, and the first metal plating layer above the source and drain of the IGBT chip is exposed; the first metal plating layer is formed The metal seed layer on the metal seed layer; the second metal plating layer formed on the second dielectric layer and the metal seed layer. Embodiments of the present invention provide a chip board-level packaging structure and a manufacturing method, which effectively improve the electrical performance of the chip packaging structure.

Description

technical field [0001] The invention relates to the technical field of microelectronic packaging, in particular to a chip board-level packaging structure and a manufacturing method. Background technique [0002] With the wide application and capacity increase of insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) chips, higher requirements are put forward for the packaging structure and packaging process of IGBT chips. [0003] The traditional IGBT chip packaging is through crimping and sintering welding, and the crimping or sintering process between the chip and the metal module is used in the process. The driving circuit layer connecting the driving chip and the gate of the IGBT chip is an existing structure, which is buried in the packaging structure, and then contacts the external electrode through the point contact method of the lead wire. The source and drain of the IGBT chip are made by crimping or sintering. [0004] The packaging structure ...

AI Technical Summary

Problems solved by technology

[0004] The packaging structure and process of the IGBT chip in the prior art, the point contact mode between the driving circuit layer and the external electrode will lead to unstable electrical performance of the device

The line layer of the source and drain of the IGBT chip is made by crimping or sintering. There is uneven pressure between the internal electrode and the metal layer of the line layer of the source and drain, and defects such as voids affect the entire IGBT chip. Electrical performance of package structure

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