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Test structure and test method

A technology of test structure and test method, which is applied in semiconductor/solid-state device test/measurement, electrical components, electric solid-state devices, etc., can solve problems that cannot meet the requirements of precise process control, and achieve yield loss and yield improvement Guaranteed effect

Active Publication Date: 2017-03-22
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0003] At present, the control of the process in this aspect includes optical methods to detect the deviation of the alignment of the two structures to achieve the alignment of the plug and the polysilicon to ensure that it is formed in the correct position, but due to the limitation of the resolution of the optics itself Limitations, when the device size continues to shrink, this method cannot meet the requirements of precise process control

Method used

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Embodiment Construction

[0027] The microphone of the present invention and its manufacturing method will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is represented, it should be understood that those skilled in the art can modify the present invention described here, and still realize the advantages of the present invention Effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0028] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the ...

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Abstract

The invention provides a test structure and a test method. The test structure comprises first regions and second regions, first functional layers and second functional layers, share plugs and detection plugs, wherein the first regions and a second regions are arranged alternately; the first functional layers and the second functional layers are arranged on the first regions and the second regions; the share plugs are arranged at the two ends of the first functional layers; the share plugs are jointly connected with the first functional layers and the first regions; the detection plugs are arranged in the middle of the second functional layers and connected with the second functional layers; and the first functional layers and the second functional layers are adjacent. When the test structure is adopted for testing, the problem of short circuit between the share plugs and polysilicon can be effectively monitored, the subsequently-caused yield loss can be avoided, and guarantee is provided for the semiconductor yield improvement.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, the invention relates to a test structure and a test method. Background technique [0002] With the development of integrated circuit technology, the size of semiconductor technology is getting smaller and more complex. The process window of many process integrations is getting smaller and smaller. For example, the short circuit between the plug and polysilicon in the contact hole is affected by the alignment accuracy and the critical dimensions of the plug and polysilicon. It is one of the difficult problems in the development of processes below 28nm. [0003] At present, the control of the process in this aspect includes optical methods to detect the deviation of the alignment of the two structures to achieve the alignment of the plug and the polysilicon to ensure that it is formed in the correct position, but due to the limitation of the resolution of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/544H01L21/66
CPCH01L22/32H01L22/14
Inventor 范荣伟陈宏璘龙吟王恺
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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