Differential readout circuit of single-ended memory

Abstract

The invention belongs to the field of memory circuits and relates to a differential readout circuit of a single-ended memory. The differential readout circuit is used for reading a storage signal of a single-ended memory. A drain electrode of the single-ended memory is controllably connected to a bit line, a grid electrode of the single-ended memory is connected to a word line and a source electrode is connected to ground voltage. The differential readout circuit comprises a connection path between the bit line and a voltage source. The connection path comprises a charging branch path for charging a storage signal detection terminal until the power supply voltage, a voltage division branch path for reducing the voltage of the bit line by threshold voltage than that of the storage signal detection terminal, a reference level path provided with a reference level output terminal for controllably providing a reference level, and a comparison unit for producing a comparison signal as a reading result according to the voltage of the storage signal detection terminal and the voltage of the reference level output terminal. The differential readout circuit is convenient and fast, has a high precision and can improve a reading speed and reduce power consumption.

Description

technical field [0001] The invention belongs to the field of memory circuits, in particular to a single-end memory reading circuit and method. Background technique [0002] A traditional single-ended memory cell has only one read bit line BL, which usually adopts a single-ended read method. Common single-ended memory read circuits such as figure 1 As shown, the bit line BL is connected to the input terminal of the inverter INV, and according to the output signal of the output terminal of the inverter, it is judged whether the bit line BL is pulled down to below the inversion level of the inverter INV, and further Judging whether the memory unit ROM CELL stores "0" or "1", if the bit line BL is pulled down below the inversion level, it means that the memory unit ROM CELL connects the bit line BL to the ground line VSS after the word line WL is turned on Together, we define this state as storing "0" and otherwise storing "1". In this single-ended reading method, since the bi...

AI Technical Summary

Problems solved by technology

[0003] Aiming at the above technical problems, a differential reading circuit and method of a single-ended memory is provided to solve the defects of slow reading speed and large reading power consumption in the prior art;

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