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A plasma etching device

An etching equipment and plasma technology, which is applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems that the etching pattern cannot be completely etched, and the particle removal is difficult, so as to avoid the problem that the pattern is not completely etched. Effect

Active Publication Date: 2019-05-21
WUXI ZHONGWEI MASK ELECTRONICS
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Problems solved by technology

[0011] The purpose of the present invention is to overcome the difficulties in removing particles at the contact hole of the mask plate of the plasma etching equipment in the prior art, and the etching pattern cannot be completely etched, etc., and provide a plasma etching equipment

Method used

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  • A plasma etching device
  • A plasma etching device

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the present invention.

[0026] figure 1 It is a schematic diagram of plasma etching equipment in the prior art, including a reaction chamber, in which a positive electrode plate and a negative electrode plate are arranged in parallel; Provided with an exhaust port;

[0027] The positive electrode plate is arranged above the reaction chamber, the negative electrode plate is arranged below the reaction chamber, a mask plate is arranged above the negative electrode plate, and the mask plate face faces up and the positive electrode above the reaction chamber Board relative.

[0028] As an aspect of the present invention, such as figure 2 Shown: a plasma etchin...

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Abstract

The invention discloses plasma etching equipment, which comprises a reaction chamber, a positive electrode plate and a negative electrode plate, wherein the positive electrode plate and the negative electrode plate are arranged in the reaction chamber in parallel; a gas inlet is arranged in the left side of the reaction chamber; a gas outlet and a mask are arranged at the lower right side of the reaction chamber; the negative electrode plate is arranged at the upper part of the reaction chamber and is connected with the mask; the mask is located at the lower part of the negative electrode plate and the surface of the mask is downward; and the positive electrode plate is arranged at the lower part of the reaction chamber and is opposite to the mask. The surface of the mask is downward, particles do not fall off in the treatment process, and the condition that a pattern is not etched or the pattern is not completely etched is avoided.

Description

technical field [0001] The invention belongs to the technical field of plasma etching, and in particular relates to a plasma etching equipment. Background technique [0002] The manufacturing process of semiconductor integrated circuits usually requires multiple photolithography processes to dig various doping windows and electrode contact holes on the dielectric layer on the surface of the semiconductor crystal or to etch metal interconnection patterns on the conductive layer. The photolithography process requires a complete set (generally 10 to 30 masks) of masks with specific geometric figures that can be precisely registered with each other, referred to as reticles. The reticle is the "printing negative" for copying the photoresist masking layer in the lithography process, and the pattern on the reticle can be transferred to the silicon wafer through the lithography process. [0003] The mask is a thin sheet of high-purity precision quartz or glass material, on which th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H01L21/67
CPCH01L21/3065H01L21/67063
Inventor 尤春刘维维沙云峰
Owner WUXI ZHONGWEI MASK ELECTRONICS
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