A tooling system for transfer of graphene film by chemical vapor deposition method

Abstract

The invention discloses a tooling system for transferring a graphene membrane by a chemical vapor deposition method. The tooling system comprises a bottom plate, a fixed post, a gasket, a clamp of a cover board and a liquid loading bucket, wherein the fixed post is fixedly connected with the bottom plate; the gasket can penetrate through the fixed post, and is used for isolating a graphene membrane support layer; the cover board is arranged at the top of the fixed post, and is used for preventing the clamp from floating on the liquid level of an etching liquid when the clamp is etched on a catalytic base by matching with a retaining post of the liquid loading bucket; the liquid loading bucket comprises a box body and a fixed plate which is fixed at the upper part of the box body; a leaking hole is formed in the box body; a manipulator hook hole and a retaining cylindrical mounting hole are formed in the fixed plate; and the clamp assembled by the bottom plate, the fixed post fixedly connected with the bottom plate, the gasket and the cover board is arranged in the box body of the liquid loading bucket. According to the tooling system, a plurality of catalytic bases on which graphene membranes grow can be simultaneously etched, so that the production efficiency is improved; and meanwhile, the clamp can be prevented from floating on the liquid level of the etching liquid when the catalytic base is etched through matching of the liquid loading bucket and the cover board.

Description

technical field [0001] The invention relates to a tooling system, in particular to a tooling system for transferring a graphene film by a chemical vapor deposition method. Background technique [0002] Graphene is carbon atoms by sp 2 The monoatomic layer planar thin film composed of hybrid orbitals in hexagonal lattice, as a new type of semiconductor material, has the characteristics of high light transmittance and high conductivity. The preparation of graphene by chemical vapor deposition (CVD) is to use carbon-containing compounds such as methane as carbon sources, and grow graphene by pyrolysis of carbon sources on the surface of catalytic substrates. Catalytic substrates are generally thin sheets made of transition metal elements such as copper, nickel, and platinum. Since the copper substrate exhibits a unique "self-limited growth" when preparing graphene by chemical vapor deposition, it is suitable for large-scale industrial production of single-layer graphene. film...

AI Technical Summary

Problems solved by technology

In addition, the traditional method of floating a piece of support layer on the surface of the etching solution is inefficient. In order to effectively improve the space utilization of the entire etching solution tank, a tooling system that can simultaneously etch multiple catalytic substrates is needed.

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