Static random access memory

Abstract

The present invention discloses a static random access memory comprising at least one static random access memory unit. The gate layout of the static random access memory unit includes first to fourth strip-like doped regions, a concave gate line, a first gate line, and a second gate line. The first to fourth strip-like doped regions are sequentially disposed in the substrate and separated from each other. The concave gate lines intersect the first to fourth strip-like doped regions. The first to fourth strip-like doped regions are disconnected from the intersection of the concave gate lines. The first gate line intersects the first strip-like doped region and the second stripe-like doped region. The first strip-like doped region and the second strip-like doped region are disconnected from the intersection of the first gate line. The second gate line intersects the third strip-like doped region and the fourth strip-like doped region. The third strip-like doped region and the fourth strip-like doped region are disconnected from the intersection of the second gate line.

Description

technical field [0001] The present invention relates to a memory, and in particular to a static random access memory. Background technique [0002] Random access memory (Random Access Memory, RAM) is a kind of volatile memory, and is widely used in information electronic products. Generally speaking, random access memory includes static random access memory (Static Random Access Memory, SRAM) and dynamic random access memory (Dynamic Random Access Memory, DRAM). [0003] Static random access memory has a faster speed for data processing, and its manufacturing process can be integrated with the manufacturing process of complementary metal oxide semiconductor transistors (Complementary Metal Oxide Semiconductor, CMOS), so the manufacturing process of static random access memory Relatively simple. [0004] However, the disadvantage of the existing SRAM is that the area occupied by the memory unit is large, and the integration degree of components cannot be effectively improve...

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Problems solved by technology

[0004] However, the disadvantage of the existing SRAM is that the area occupied by the storage unit is large, and the integration of components cannot be effectively improved.

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