Quantum dot electroluminescent device, and display device and lighting device with quantum dot electroluminescent device
A technology of electroluminescent devices and quantum dots, which is applied in lighting devices, fixed lighting devices, semiconductor devices of light-emitting elements, etc., can solve problems such as carrier injection imbalance, improve luminous efficiency and life, and improve luminous efficiency and working life effects
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[0061] Example 1
[0062] The structure of quantum dot electroluminescent device is as follows image 3 As shown, the substrate 01 is a glass substrate, the material of the anode 10 is ITO with a thickness of 150 nm, the material of the quantum dot layer 30 is CdSe / ZnS red core-shell quantum dots, and the wavelength range of its absorption spectrum is between 300 and 610 nm. , the thickness of the quantum dot layer 30 is 20 nm; the material of the electron blocking layer 40 is a hole transport material, specifically polyvinyl carbazole (PVK), the wavelength range of its fluorescence spectrum is between 380 and 460 nm, and its thickness is 5 nm. The absorption spectrum of the dot layer 30 overlaps with the fluorescence spectrum of the electron blocking layer 40; the electron functional layer 50 is made of ZnO with a thickness of 40 nm, and the hole functional layer 20 is poly(3,4-ethylenedioxythiophene)-polystyrene Sulfonic acid PEDOT: PSS and poly(N,N'-bis(4-butylphenyl)-N,N'...
Example Embodiment
[0063] Example 2
[0064] The difference from Example 1 is that the thickness of the electron blocking layer 40 is 10 nm.
Example Embodiment
[0065] Example 3
[0066] The difference from Embodiment 2 is that the thickness of the electron blocking layer 40 is 0.1 nm.
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