Polysilicon package

Abstract

The present invention addresses the problem of providing a package in which a bag formed from a polyethylene resin film having a thin thickness, more specifically, a thickness of 300 [mu]m or less, is filled with polysilicon chunks (Si chunks), wherein damage to the bag caused by the Si chunks is effectively prevented. The present invention provides a polysilicon package in which a bag (1) formed from a polyethylene resin film having an average thickness of 300 [mu]m or less is filled with Si chunks (4), said polysilicon package characterized in that the bag (1) has, at the bottom thereof, a section (2) joined by heat sealing, and the Si chunks (4) fill the bag (1) such that the maximum expansion of the bag (1) when the bag (1) is maintained in an upright state with the bottom thereof serving as a ground contact surface is 5% or less.

Description

technical field [0001] The present invention relates to a polycrystalline silicon package containing pulverized polycrystalline silicon used as semiconductor manufacturing raw materials and the like. Background technique [0002] High-purity polycrystalline silicon is mainly produced by the Siemens method, and is used as a raw material for producing silicon single crystals used as raw materials for semiconductor devices and the like. The Siemens method is a method in which high-purity polycrystalline silicon is vapor-deposited in a rod shape by electrically heating a high-purity silicon seed crystal (core wire) and reacting silane-based gas and hydrogen gas on the surface of the seed crystal. [0003] The polycrystalline silicon rods produced by the above-mentioned Siemens method are sometimes pulverized, packaged and bundled in the form of polycrystalline silicon pulverized pieces (hereinafter also referred to as Si pulverized products), and transported to single crystal po...

AI Technical Summary

Problems solved by technology

[0005] However, in the bags filled with crushed polysilicon as described above, problems have been pointed out that during transportation, sharp corners of the crushed Si content in the packaging bag are pierced, and the polysilicon is contaminated by contact with outside air.

That is, if the film thickness is increased too much, when the opening for filling is sealed by heat sealing after filling the pulverized polysilicon, the thermal welding by heat sealing will easily become insufficient, and the airtightness of the bag will decrease.

In particular, for a bag that is folded at the seam such as a gusset bag, the heat sealing at the folded portion becomes insufficient, and the airtightness is greatly reduced.

In addition, if the thickness of the film forming the bag is too thick, there will also be a problem that when the bag filled with crushed polysilicon is packed into a shipping box, the bag is bulky and cannot be packed efficiently.

[0010] In this way, only by adjusting the thickness of the bag, there will be other problems such as a decrease in airtightness and packing performance, so it is impossible to effectively prevent the breakage of the bag due to the melting point of the crushed polysilicon.

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