Silicon wafer edge polishing device

Abstract

The invention discloses a silicon wafer edge polishing device. The silicon wafer edge polishing device comprises a vacuum sucker used for adsorbing a silicon wafer and a polishing drum used for carrying out edge polishing on a reference surface of the silicon wafer, wherein the vacuum sucker is connected to a vacuum pump, the polishing drum is cylindrical, polishing cloth adheres to the surface of the polishing drum, and the reference surface of the silicon wafer is parallel with a center shaft of the cylindrical polishing drum. The silicon wafer edge polishing device is compact in structure, simple and practical. According to the design of the cylindrical polishing drum, full contact of the polishing cloth and the reference surface of the silicon wafer is guaranteed, the fixed vertical angle between the polishing cloth on the polishing drum and the reference surface of the silicon wafer is guaranteed when the polishing cloth moves relative to the reference surface of the silicon wafer, and therefore the polishing degree of each part of the reference surface of the silicon wafer can be uniform and consistent, irregular scratches can be avoided, and the polishing quality of the edge of the silicon wafer can be effectively improved.

Description

technical field [0001] The invention relates to a silicon wafer edge polishing device, which belongs to the technical field of silicon wafer processing. Background technique [0002] Silicon material is the main substrate material for the manufacture of VLSI. With the rapid development of the semiconductor industry, the precision requirements for substrate materials are getting higher and higher, especially for the edge state of silicon polished wafers. For silicon polished wafers with a diameter of more than 6 inches, especially 8 inches and 12 inches, the edge of the silicon wafer needs to be polished during substrate processing to ensure that no slip lines or epitaxial layers are generated at the edge of the silicon wafer during epitaxy Errors and other defects, thereby improving the yield of epitaxial wafers or devices. The edge polishing of silicon wafers is generally completed on independent equipment, using chemical mechanical polishing method, using polishing liquid...

AI Technical Summary

Problems solved by technology

If one end of the flat side is less polished and the damaged layer is not completely removed, then it is easy to form the problem of multi-grain aggregation during the epitaxy process

[0003] In the traditional reference surface polishing method, one is that the polishing cloth is in partial contact with the flat edge, and the rotation direction of the polishing cloth is parallel to the reference surface of the silicon wafer. The disadvantage of this method is that although the relative rotation of the polishing cloth and the reference surface of the silicon wafer can be adjusted The angle is fixed, but the uniformity of polishing cannot be guaranteed everywhere on the entire flat edge due to local contact

Another method is that the polishing cloth is in full contact with the flat edge, but the relative movement angle between the polishing cloth and the reference surface of the silicon wafer is not fixed. Due to the unfixed angle, it is easy to cause irregular and various angles of polishing on the reference surface of the silicon wafer. Scratch streaks to reduce wafer edge roughness

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