A three-dimensional stacked memory

Abstract

The invention discloses a three-dimensional stacking memory. The three-dimensional stacking memory comprises multiple layers of memories, each layer of the memory comprises a memory array formed by memory units and used for storing data, a spare memory cell serving as a redundant resource and replacing a fault memory unit, a built-in self-testing module used for testing the memory and calibrating the position of the fault memory unit in the memory array, and a redundant resource replacing module used for using the spare memory cell on the layer of the fault memory unit and the spare memory unit on the adjacent layer to replace the fault memory unit according to the position of the fault memory unit calibrated by the built-in self-testing module. Therefore, the redundant resource replacing module uses the spare memory cell on the layer of the fault memory unit and the spare memory unit on the adjacent layer to replace the fault memory unit according to the position of the fault memory unit calibrated by the built-in self-testing module, the use ratio of the redundant resource and the repair rate of the fault unit are improved under the condition of relatively small area of a silicon through hole.

Description

technical field [0001] The invention relates to the field of memory, in particular to a three-dimensional stack memory. Background technique [0002] Three-dimensional stacked memory uses through-silicon vias (TSV), micro bumps (Micro Bump), etc. to form vertical signal paths to realize vertical stacking of two-dimensional memory chips, which can improve the integration and memory access bandwidth of the memory at the same time , is an important means to break through the "storage wall" problem of computer performance improvement. JEDEC has formulated the Wide I / O interface standard for 3D stacking applications of memory and logic circuits, which greatly improves the 3D stacking integration capability of 3D stacked memories. A schematic diagram of a three-dimensional stacked memory such as figure 1 As shown, it is predicted that three-dimensional stacked memory will play an important role in the fields of large-scale storage and high-performance computing in the near futur...

AI Technical Summary

Problems solved by technology

The resource utilization of the intra-layer redundancy repair strategy and the whole-layer redundancy repair strategy is low, while the paired redundancy repair strategy cannot effectively share the redundant storage resources between the paired layers, which also limits the utilization of redundant storage resources

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