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Memory device and manufacturing method thereof

A manufacturing method and memory technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as insufficient process margin and decline in process yield rate, so as to increase process yield rate and increase process margin Effect

Active Publication Date: 2019-07-26
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the size of DRAM shrinks, there will be problems of insufficient process margin and a decrease in process yield

Method used

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  • Memory device and manufacturing method thereof
  • Memory device and manufacturing method thereof
  • Memory device and manufacturing method thereof

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Embodiment Construction

[0035] The present invention will be described more fully below with reference to the drawings of this embodiment. However, the present invention can also be embodied in various forms and should not be limited to the embodiments described herein. The thicknesses of layers and regions in the drawings may be exaggerated for clarity. The same or similar reference numerals denote the same or similar elements, and the following paragraphs will not repeat them one by one.

[0036] Figure 1A-1B is a cross-sectional view and a top view of a memory device showing a step of a method for manufacturing a memory device according to some embodiments of the present invention, and Figure 1A is along Figure 1B The profile drawn by the line segment 1A-1A. See Figure 1A-1B A substrate 102 is provided, the substrate 102 has an isolation trench 104 and at least two active regions 106 , and the two active regions 106 are separated by the isolation trench 104 . In some embodiments, the activ...

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Abstract

The invention provides a memory device and a manufacturing method thereof. The memory device includes: a substrate with an isolation groove and two active areas, and each active area includes: a first word line, a second word line, a source area, a first drain area and a second drain area. The memory device further includes a first insulating layer partially filling the isolation groove; a second insulating layer disposed on the first word line and the second word line; and a conductive layer disposed on the first drain region, the second drain on the pole region and on the sidewall of the isolation trench not covered by the first insulating layer. The invention also provides a manufacturing method of the memory device. By implementing the invention, the process margin and process yield can be increased.

Description

technical field [0001] The present invention relates to a memory device and its manufacturing method, and more particularly to a memory device with a drain contact plug and its manufacturing method. Background technique [0002] In order to increase the device stacking density and improve the overall performance of the DRAM, the current manufacturing technology continues to make efforts to reduce the capacitance in the DRAM and reduce the size of the DRAM. However, as the size of the DRAM shrinks, there will be problems of insufficient process margin and decreased process yield. Therefore, the industry needs a memory device and a manufacturing method thereof that can further reduce the size and increase process margin and process yield. Contents of the invention [0003] The present invention provides a memory device, comprising: a substrate having an isolation groove and two active regions, wherein the two active regions are separated by the isolation groove, and each ac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8242H01L27/108H01L21/768H10B12/00
CPCH01L21/76838H10B12/377H10B12/30H10B12/37H10B12/01
Inventor 吴奇煌陈佩瑜陈品杉
Owner WINBOND ELECTRONICS CORP