Intermediate structure of micro-LED unit and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of difficult mass production, high production cost, labor and time consumption, etc., and achieve success rate and efficiency improvement , the effect of large contact area
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 The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
 Figure 1A to Figure 1J It is a schematic cross-sectional view of a manufacturing method of a micro LED device according to an embodiment of the present invention. Figure 1A to Figure 1H It is a schematic cross-sectional view of the manufacturing method of the micro-LED intermediary structure. Please refer to Figure 1A , firstly, a semiconductor structure 10 is provided. The semiconductor structure 10 includes multiple semiconductor layers (not labeled) and a first sacrificial layer 140 stacked on the inner surface of the growth substrate S1 in sequence. The first sacrificial layer 140 is disposed on the multi-layer semiconductor. The multilayer semiconductor includes a first-type semiconductor layer 130 and a second-type semiconductor layer 110 opposite in polarity to the first-ty...
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