Epitaxial wafer of gallium nitride-based light-emitting diode and manufacturing method thereof

Abstract

The present invention discloses an epitaxial wafer of a GaN-based light emitting diode and a manufacturing method thereof, and belongs to the semiconductor technology field. The epitaxial wafer comprises a sapphire substrate, a GnN buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, a P-type AlGaN layer and a P-type GaN layer. The multiple quantum well layer is formed by laminating a plurality of quantum well layers and a plurality of quantum barrier layers alternatively, the quantum well layers are InGaN layers doped with Al, and the quantum barrier layers are GaN layers. The plurality of quantum well layers belong to the front well, the intermediate well and the rear well orderly along the lamination direction of the plurality of quantum well layers, the thicknesses of the quantum well layers belonging to the front well, the quantum well layers belonging to the intermediate well and the quantum well layers belonging to the rear well are reduced orderly, the contents of the In components are increased orderly, and the Al doping concentrations are increased orderly. According to the present invention, the electrons as much as possible are limited in the several quantum well layers closest to the P-type AlGaN layer, at the same time, the multiple quantum well layer is injected in a hole conveniently, and the luminous efficiency of the light-emitting diode is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a gallium nitride-based light-emitting diode and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, LED for short) is a semiconductor device capable of effectively converting electrical energy into light energy. At present, gallium nitride-based LEDs have received more and more attention and research. [0003] The epitaxial wafer of a GaN-based LED includes a sapphire substrate, a GaN buffer layer, an undoped GaN layer, an N-type GaN layer, and a multiple quantum well layer (English: Multiple Quantum Well, referred to as: MQW) stacked on the sapphire substrate in sequence. , P-type AlGaN layer, and P-type GaN layer. When a current flows, the electrons in the N-type GaN layer and the holes in the P-type GaN layer enter the multi-quantum well layer to recombine and emit light. [0004] In...

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Problems solved by technology

[0005] The quality of the hole is larger than that of the electron, and the mobility and mobility are lower than that of the electron. In addition, only a small part of the Mg doped in the P-type GaN layer can be activated, so the number of holes injected into the multi-quantum well layer is small, and the electrons are in the MQW layer. The number of multi-quantum well layers is too large, which is prone to overflow, reduces the effective recombination of electrons and holes, and reduces the luminous efficiency of light-emitting diodes

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