A plasma processing apparatus and method provided with a feedback declamping system

Abstract

The invention provides a plasma processing device with a feedback clamping removing system. The plasma processing device comprises a plasma processing chamber and a static chuck which is placed in the plasma processing chamber, wherein the static chuck is used for supporting a substrate. The feedback clamping removing system comprises a lifting device; a cylinder which is connected with an end of the lifting device; a gas conveying line which drives the cylinder to operate; and a feedback control line. A pressure detecting meter in the feedback control line can accurately measure air pressure at the front end of the cylinder in a clamping removing process between the substrate and the static chuck, and compares the air pressure with a safe pressure in a controller. When the air pressure which is detected by the pressure detecting meter at the front end of the cylinder is different from the safe pressure, the controller makes a decompression valve act for modulating the output to the safe pressure, thereby ensuring high safety in the clamping removing process between the substrate and the static chuck.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a plasma processing device and its declamping device and method. Background technique [0002] Micromachining of semiconductor substrates or substrates is a well-known technique that can be used to fabricate, for example, semiconductors, flat panel displays, light emitting diodes (LEDs), solar cells, and the like. The different steps of micromachining fabrication can include plasma-assisted processes (eg, plasma-enhanced chemical vapor deposition, reactive ion etching, etc.) that are performed inside a reaction chamber into which process gases are fed. A radio frequency source is inductively and / or capacitively coupled to the interior of the reaction chamber to energize the process gas to form and maintain a plasma. Inside the reaction chamber, the exposed substrate is supported by the chuck and fixed in a fixed position by a certain clamping force to ensure the safety...

AI Technical Summary

Problems solved by technology

If the lifting device cannot provide a suitable lifting force, due to the limited number of lifting devices, it cannot evenly act on the entire backside of the substrate

Therefore, in some parts of the substrate that are not in contact with the lifting device, improper lifting force will cause the substrate to be twisted and deformed, resulting in irreversible damage to the substrate

There are many reasons for the inappropriate lifting force of the lifting device. Usually, the lifting device is controlled by the cylinder connected to it. The pressure in the cylinder can control the lifting force of the lifting device. During the cylinder process, the regulator is inaccurate or some control valves are damaged, which can easily cause the gas pressure in the cylinder to be too high, the lifting device to lift too much, and the speed is too fast, resulting in damage to the substrate

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