A grounding ring and reaction chamber for limiting plasma leakage

Abstract

The invention discloses a grounding ring for limiting plasma leakage. The grounding ring is arranged in a reaction cavity, the reaction cavity comprises a limitation ring, the grounding ring is arranged below the limitation ring and comprises a plurality of concentric grounding round rings with radius gradually increased, the distance between each two adjacent concentric grounding round rings is equal and is two times of the distance between two adjacent concentric round rings on the limitation ring, and each concentric grounding round ring is arranged right below the corresponding concentric round ring on the limitation ring. The grounding ring has the advantages that the distance between adjacent ring gaps of the grounding ring is two times the distance between adjacent concentric round rings of the limitation ring, and air flow quantity is ensured; and on the other hand, a radial interface is similar to the limitation ring and downwards extends, thus, the longitudinal distance of a ground potential can be increased, and the limitation effect is improved.

Description

technical field [0001] The invention relates to the technical field of plasma etching, in particular to a grounding ring for limiting plasma and radio frequency leakage and a reaction chamber thereof. Background technique [0002] In the process of plasma etching the substrate, we hope to confine the plasma and radio frequency energy to a limited etching reaction area to improve energy efficiency, avoid corrosion of the cavity caused by plasma leakage, and reduce damage to electrical signals. interference. [0003] In the prior art, the downward confinement of the plasma in the reaction chamber is realized by a plasma confinement ring, but considering the processing limitations and aging of the insulating layer (currently yttrium oxide) on the metal surface of the plasma confinement ring The problem is that the confinement ring is currently a floating potential that is not grounded, so its confinement of the plasma only limits the mean free path in terms of physical size, a...

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Problems solved by technology

[0003] In the prior art, the downward confinement of the plasma in the reaction chamber is realized by a plasma confinement ring, but considering the processing limitations and aging of the insulating layer (currently yttrium oxide) on the metal surface of the plasma confinement ring The problem is that the confinement ring is currently an ungrounded floating potential, so its confinement of the plasma only limits the mean free path in terms of physical size, and there is no electric field confinement, so there is insufficient confinement of the plasma and radio frequency leakage. question

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